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| 型号： | EE-SY169A |
| 厂商： | Omron Electronics Inc-EMC Div |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | SENSR OPTO TRANS 4MM REFL TH PCB |
| 产品目录绘图： | Sensor PCB Mount Reflective Sensing |
| 标准包装： | 100 |
| 检测距离： | 0.157" (4mm) |
| 检测方法： | 反射 |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 20mA |
| 电流 - DC 正向(If)： | 50mA |
| 输出类型： | 光电晶体管 |
| 响应时间： | 30µs，30µs |
| 安装类型： | 通孔 |
| 封装/外壳： | PCB 安装 |
| 包装： | 散装 |
| 工作温度： | 0°C ~ 70°C |
| 产品目录页面： | 2785 (CN2011-ZH PDF) |
| 其它名称： | EESY1268R EESY169A EESY169A1 OR582 |
Photomicrosensor (Reflective)
EE-SY169A
Be sure to read Precautions on page 25.
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
? High-quality model with plastic lenses.
? Highly precise sensing range with a tolerance of ± 0.6 mm horizon-
tally and vertically.
? Convergent reflective model with infrared LED.
■ Absolute Maximum Ratings (Ta = 25 ° C)
Item
Symbol
Rated value
Surface A
Emitter
Forward current
Pulse forward cur-
rent
Reverse voltage
I F
I FP
V R
50 mA
(see note 1)
1A
(see note 2)
3V
1 ±0.1 dia.
(see note)
(see note)
Two, C0.2
1 ± 0.1 dia.
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
V CEO
V ECO
30 V
---
Collector current
Collector dissipa-
tion
I C
P C
20 mA
100 mW
(see note 1)
Ambient tem-
Operating
Topr
0 ° C to 70 ° C
Storage
A
Internal Circuit
C
Note: These dimensions are for the
surface A. Other lead wire
pitch dimensions are for the
perature
Soldering temperature
Tstg
Tsol
–20 ° C to 80 ° C
260 ° C
(see note 3)
K
E
housing surface.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions Tolerance
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. The pulse width is 10 μ s maximum with a frequency of
100 Hz.
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
± 0.3
± 0.375
± 0.45
± 0.55
± 0.65
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
V F
I R
λ P
I L
I D
I LEAK
1.5 V max.
10 μ A max.
920 nm typ.
160 μ A min., 2,000 μ A max.
2 nA typ., 200 nA max.
2 μ A max.
I F = 30 mA
V R = 4 V
I F = 20 mA
I F = 20 mA, V CE = 5 V
White paper with a reflection ratio of
90%, d = 4 mm (see note)
V CE = 5 V, 0 l x
I F = 20 mA, V CE = 5 V with no reflec-
tion
Collector–Emitter saturated volt- V CE (sat)
age
---
---
Peak spectral sensitivity wave-
λ P
850 nm typ.
V CE = 5 V
length
Rising time
Falling time
tr
tf
30 μ s typ.
30 μ s typ.
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
156
EE-SY169A Photomicrosensor (Reflective)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EE-SY169A | 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH REFLECTIVE |
| EE-SY169A | 制造商:Omron Electronic Components LLC 功能描述:OPTOSwITCH OPTOCOuPLER OuTPuT TyPE:TRANS |
| EESY169AD | 制造商:OMRON AUTOMATION AND SAFETY 功能描述:PHOTOMICROSENSORW/PLASTIC COVR 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin |
| EE-SY169A-D | 功能描述:PHOTOMICROSENSORW/PLASTIC COVR RoHS:是 类别:传感器，转换器 >> 光学 - 反射式 - 模拟输出 系列:- 产品变化通告:Product Discontinuation 03/Dec/2009 标准包装:50 系列:- 检测距离:0.157" (4mm) 检测方法:反射 电压 - 集电极发射极击穿（最大）:30V 电流 - 集电极 (Ic)（最大）:- 电流 - DC 正向(If):50mA 输出类型:光电晶体管 响应时间:10µs，50µs 安装类型:通孔 封装/外壳:PCB 安装 包装:散装 工作温度:-40°C ~ 85°C |
| EESY169B | 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin |
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