参数资料
型号: EE-SY410
厂商: Omron Electronics Inc-EMC Div
文件页数: 1/2页
文件大小: 0K
描述: OPTO SENSOR 5MM REFLECT LIGHT-ON
产品目录绘图: EE Series Low Profile
Reflective Sensing
标准包装: 500
检测距离: 0.197"(5mm)
检测方法: 反射
输出配置: 亮-开
安装类型: 通孔
电流 - 电源: 20mA
电源电压: 4.5 V ~ 16 V
封装/外壳: *
包装: 托盘
产品目录页面: 2785 (CN2011-ZH PDF)
其它名称: EESY410
OR526
Photomicrosensor (Reflective)
EE-SY310/-SY410
Be sure to read Precautions on page 25.
4.6 +0.2
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Five, 0.5
? 0.3
■ Features
? Incorporates an IC chip with a built-in detector element and ampli-
fier.
? Incorporates a detector element with a built-in temperature com-
pensation circuit.
? Compact reflective model with a molded housing.
? A wide supply voltage range: 4.5 to 16 VDC
? Directly connects with C-MOS and TTL.
Two. R1.5
Two. R2
? Dark ON model (EE-SY310)
? Light ON model (EE-SY410)
■ Absolute Maximum Ratings (Ta = 25 ° C)
15 to 1 8
17 to 2 4
Five, 0.3
Emitter
Detector
Item
Forward current
Reverse voltage
Pulse forward
current
Power supply
Symbol
I F
V R
I FP
V CC
Rated value
50 mA
(see note 1)
4V
1A
(see note 2)
16 V
voltage
Internal Circuit
Output voltage
V OUT
28 V
A
K
V
O
G
Unless otherwise specified, the
tolerances are as shown below.
Ambient tempera-
Output current
Permissible out-
put dissipation
Operating
I OUT
P OUT
Topr
16 mA
250 mW
(see note 1)
–40 ° C to 75 ° C
Storage
Terminal No. Name
A Anode
K Cathode
Dimensions
3 mm max.
3 < mm ≤ 6
Tolerance
± 0.2
± 0.24
ture
Soldering temperature
Tstg
Tsol
–40 ° C to 85 ° C
260 ° C
(see note 3)
V
O
G
Power supply
(Vcc)
Output (OUT)
Ground (GND)
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
± 0.29
± 0.35
± 0.42
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. The pulse width is 10 μ s maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Forward voltage
Reverse current
V F
I R
1.2 V typ., 1.5 V max.
0.01 μ A typ., 10 μ A max.
I F = 20 mA
V R = 4 V
Peak emission wavelength λ P
920 nm typ.
I F = 20 mA
Detector
Low-level output voltage
High-level output voltage
Current consumption
Peak spectral sensitivity
V OL
V OH
I CC
λ P
0.12 V typ., 0.4 V max.
15 V min.
3.2 mA typ., 10 mA max.
870 nm typ.
Vcc = 4.5 to 16 V, I OL = 16 mA,
without incident light (EE-SY310), with incident light
(EE-SY410) (see notes 1 and 2)
Vcc = 16 V, R L = 1 k Ω ,
with incident light (EE-SY310), without incident light
(EE-SY410) (see notes 1 and 2)
Vcc = 16 V
V CC = 4.5 to 16 V
wavelength
LED current when output is OFF
I FT
6 mA typ., 15 mA max.
V CC = 4.5 to 16 V
LED current when output is ON
Hysteresis
Response frequency
Response delay time
Response delay time
Δ H
f
t PLH (t PHL )
t PHL (t PLH )
17% typ.
50 Hz min.
3 μ s typ.
20 μ s typ.
V CC = 4.5 to 16 V
V CC = 4.5 to 16 V, I F = 15 mA, I OL = 16 mA
V CC = 4.5 to 16 V, I F = 15 mA, I OL = 16 mA
V CC = 4.5 to 16 V, I F = 15 mA, I OL = 16 mA
170
EE-SY310/-SY410 Photomicrosensor (Reflective)
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