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参数资料
| 型号： | EF200 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.6 A, 2000 V, SILICON, SIGNAL DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 40K |
| 代理商： | EF200 |
HIGH VOLTAGE HIGH CURRENT MINIATURE
RECTIFIERS
EF to RR
SMALL SIZE MOLDED PACKAGES
PRV 1,000 TO 12,000 VOLTS
FAST RECOVERY(R-SERIES)
AVALANCHE CHARACTERISTICS
EDI
Type No.
Peak
ReverseVoltage
PRV(Volts)
Avg.Forward.Current
IO at 50
oC
(mA)
FIG.1
Max.Fwd Voltage
Drop 25
oC and I
O
VF(Volts)
Max. Peak Surge
Cureent, IFSM
(8.3 ms) (Amps)
FIG.2
Repetitive Peak
Forward Current
IFRM (Amps)
STANDARD RECOVERY
EF100
1,000
600
2.0
35
8.0
EF150
1,500
600
2.0
35
8.0
EF200
2,000
600
2.0
35
8.0
EG200
2,000
400
3.0
30
6.0
EG250
2,500
400
3.0
30
6.0
EG300
3,000
400
3.0
30
6.0
EH300
3,000
300
4.0
25
5.0
EH350
3,500
300
4.0
25
5.0
EH400
4,000
300
4.0
25
5.0
EK450
4,500
200
6.0
15
3.0
EK500
5,000
200
6.0
15
3.0
EK600
6,000
200
6.0
15
3.0
EM700
7,000
175
8.0
12
2.5
EM800
8,000
175
8.0
12
2.5
EP900
9,000
150
10.0
10
2.0
EP1000
10,000
150
10.0
10
2.0
ER1100
11,000
100
12.0
8
1.5
ER1200
12,000
100
12.0
8
1.5
250 NANOSECOND RECOVERY(FIG.4)
RF160B
1,600
500
2.6
25
8.0
RF200B
2,000
500
2.6
25
8.0
RG200B
2,000
350
3.9
20
6.0
RG300B
3,000
350
3.9
20
6.0
RK300B
3,000
150
7.8
10
3.0
RK400B
4,000
150
7.8
10
3.0
RK500B
5,000
150
7.8
10
3.0
RK600B
6,000
150
7.8
10
3.0
RM700B
7,000
125
10.4
8
2.0
RM800B
8,000
125
10.4
8
2.0
RP900B
9,000
100
13.0
7
1.5
RF160B
1,600
500
2.6
25
8.0
RF200B
2,000
500
2.6
25
8.0
RG200B
2,000
350
3.9
20
6.0
RP1000B
10,000
100
13.0
7
15.
RR1100B
11,000
80
15.6
6
1.0
RR1200B
12,000
80
15.6
6
1.0
150 NANOSECOND RECOVERY(FIG.4)
RF160A
1,600
500
2.6
25
8.0
RF200A
2,000
500
2.6
25
8.0
RG200A
2,000
350
3.9
20
6.0
RG300A
3,000
350
3.9
20
6.0
RK300A
3,000
150
7.8
10
3.0
RK400A
4,000
150
7.8
10
3.0
RK500A
5,000
150
7.8
10
3.0
RK600A
6,000
150
7.8
10
3.0
RM700A
7,000
125
10.4
8
2.0
RM800A
8,000
125
10.4
8
2.0
RP900A
9,000
100
13.0
7
1.5
RP1000A
10,000
100
13.0
7
15.
RR1100A
11,000
80
15.6
6
1.0
RR1200A
12,000
80
15.6
6
1.0
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