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参数资料
| 型号： | EFD25-3F3 |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | EFD cores and accessories |
| 中文描述： | EFD的内核及配件 |
| 文件页数： | 2/6页 |
| 文件大小： | 64K |
| 代理商： | EFD25-3F3 |
1997 Nov 21
2
Philips Components
Product specication
EFD cores and accessories
EFD25
CORES
Effective core parameters
SYMBOL
PARAMETER
VALUE
UNIT
Σ(I/A)
core factor (C1)
1.00
mm1
Ve
effective volume
3300
mm3
Ie
effective length
57.0
mm
Ae
effective area
58.0
mm2
Amin
minimum area
55
mm2
m
mass of core half
≈8g
Fig.1 EFD25 core half.
Dimensions in mm.
handbook, halfpage
MGC342
11.4
0.2
18.7 0.6
25 0.65
9.3
0.25
12.5
0.15
5.2
0.15
0.6
9.1
0.2
Core halves
Gapped cores are available on request. Clamping force 40
±20 N.
Properties of core sets under power conditions
GRADE
AL
(nH)
e
AIR GAP
(
m)
TYPE NUMBER
3C30
1800
±25%
≈1450
≈0
EFD25-3C30
3C85
2200
±25%
≈1780
≈0
EFD25-3C85
3C90
2200
±25%
≈1780
≈0
EFD25-3C90
3F3
2000
±25%
≈1600
≈0
EFD25-3F3
3F4
1000
±25%
≈800
≈0
EFD25-3F4
GRADE
B (mT) at
CORE LOSS (W) at
H = 250 A/m;
f = 25 kHz;
T = 100
°C
f=25kHz;
= 200 mT;
T = 100
°C
f = 100 kHz;
= 100 mT;
T = 100
°C
f = 400 kHz;
=50mT;
T = 100
°C
f = 1 MHz;
=30mT;
T = 100
°C
f = 3 MHz;
=10mT;
T = 100
°C
3C30
≥360
≤0.35
≤0.38
3C85
≥320
≤0.50
≤0.60
3C90
≥330
≤0.35
≤0.38
3F3
≥315
≤0.38
≤0.66
3F4
≥300
≤0.70
≤1.10
B
B
B
B
B
相关PDF资料 |
PDF描述 |
|---|---|
| EFD25-3F4 | EFD cores and accessories |
| EFD30-3C30 | EFD cores and accessories |
| EFD30-3C85 | EFD cores and accessories |
| EFD30-3C90 | EFD cores and accessories |
| EFD30 | EFD cores and accessories |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EFD25-3F4 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:EFD cores and accessories |
| EFD-25-K-10P-EP | 制造商:FERYSTER 制造商全称:FERYSTER Inductive Components Manufacturer 功能描述:EFD Bobbin |
| EFD25-K-10P-SMD | 制造商:FERYSTER 制造商全称:FERYSTER Inductive Components Manufacturer 功能描述:COIL FORMER |
| EFD25-K-H-12P-SMD | 制造商:FERYSTER 制造商全称:FERYSTER Inductive Components Manufacturer 功能描述:EFD Bobbin |
| EFD2C26 | 制造商:Leach International Corporation 功能描述:NON-VA VEGA - Bulk |
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