参数资料
型号: EGP10A
厂商: Fairchild Semiconductor
文件页数: 1/4页
文件大小: 143K
描述: DIODE FAST GPP 1A 50V DO-41
产品变化通告: Material Composition Change 23/Mar/2007
标准包装: 5,000
二极管类型: 标准
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 950mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 5µA @ 50V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-41
包装: 带卷 (TR)
?2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
EGP10A - EGP10K Rev. A
EGP10A - EGP10K 1.0 Ampere Glass
Passivated High Efficiency Rectifiers
July 2007
EGP10A - EGP10K
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Features
? Superfast recovery time for high efficiency
? Low forward voltage, high current capability
? Low leakage current
? High surge current capability
Absolute Maximum Ratings*
Ta
= 25
°C
unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
Ta
= 25
°C
unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
IO
Average Rectified Current
.375 " lead length @ TL = 75°C
1.0
A
if(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
30
A
PD
Total Device Dissipation
Derate above 25°C
2.5
17
W
mW°C
IC
Thermal Resistance, Junction to Ambient
50
°C/W
TJ, TSTG
Junction and Storage Temperature Range
-65 ~ 150
°C
Parameter
Device
Units
10A 10B 10C 10D 10F 10G 10J 10K
Peak Repetitive
Reverse Voltage
50
100
150
200
300
400
600
800
V
Maximum RMS Voltage
35
70
105
140
210
280
420
560
V
DC Reverse Voltage (Rated VR)
50
100
150
200
300
400
600
800
V
Maximum Reverse Current
@ rated VR TA = 25°C
TA = 125°C
5.0
100
μA
μA
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
50
75
nS
Maximum Forward Voltage @ 1.0 A
0.95
1.25
1.7
V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
22
15
pF
DO-41 Glass case
COLOR BAND DENOTES CATHODE
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