参数资料
型号: EGP20B
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 265K
描述: DIODE FAST GPP 2A 100V DO-15
产品变化通告: Material Composition Change 23/Mar/2007
标准包装: 4,000
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 2A
电压 - 在 If 时为正向 (Vf)(最大): 950mV @ 2A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 5µA @ 100V
电容@ Vr, F: 70pF @ 4V,1MHz
安装类型: 通孔
封装/外壳: DO-204AC,DO-15,轴向
供应商设备封装: DO-15
包装: 带卷 (TR)
EGP20A - EGP20K — 2.
0 A Glass-Passivated Hi
gh-Efficiency Rectifiers
? 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
EGP20A - EGP20K Rev. 1.1.0 1
June 2013
EGP20A - EGP20K
2.0 A Glass-Passivated High-Efficiency Rectifiers
Features
? Glass-Passivated Cavity-Free Junction
? High Surge Current Capability
? Low Leakage Current
? Super-Fast Recovery Time for High Efficiency
? Low Forward Voltage, High Current Capability
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol Parameter Value Units
IF(AV)
Average Rectified Current
.375 inch lead length at TA
= 55
°C
2.0 A
IFSM
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
75 A
TJ, TSTG
Junction and Storage Temperature Range -65 to 150
°C
PD
Total Device Dissipation
3.13
W
Derate above 25°C
25
mW°C
RθJA
Thermal Resistance, Junction to Ambient 40
°C/W
RθJL
Thermal Resistance, Junction to Lead 15
°C/W
DO-15 Glass case
COLOR BAND DENOTES CATHODE
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