参数资料
型号: EGP50B-E3/54
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 70K
描述: DIODE 5A 100V 50NS GP20 AXIAL
标准包装: 1,400
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 5A
电压 - 在 If 时为正向 (Vf)(最大): 950mV @ 5A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 5µA @ 100V
安装类型: 通孔
封装/外壳: DO-201AA,DO-27,轴向
供应商设备封装: GP20
包装: 带卷 (TR)
\? EGP50A, EG.P50B, EGP50c, EG.P50D, EG.P50F, EGP50G.7 www'ViShay'C°m Vishay General Semiconductor
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted)
PARAMETER
Maximum instantaneousforward voltage
Maximum DC reverse current
at rated DC blocking voltage TA : 125 ccMaximum reverse IF : 0.5 A, IR : 1.0 A,
recovew time I" : 0.25 A
Typical junction capacitance 4.0 V, 1 MHZ
THERMAL cHARAcTERIsTIcs (TA = 25 0C unless
PARAMETER
Typical thermal resistance
NoteN ate2 T J : TJ Max.
(i) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
PREFERRED P/N
EGP50GaEs/54 jtjj
mm mmEGP50GHEa/sriii j?jjEGP5oGHEa/rsiii jtjrj
ii) AEC-Q101 qumniedRATINGS AND cHARAcTERIsTIcs cuRvEs (TA = 25 (‘C unless otherwise noted)
175
H Resistive or Inductive Load A 83 ms Smgje Ha” S,ne.WaVe
E 3 150
e ‘ E
3
(3 \ I‘ g 1255 CopperHeatsinks k § 100 ‘
0: 3I w I IIE E 75
E ‘ TL uO_ 50 ‘I
m + t II
g U.E75“jS5mmj E 25
Q Lead Length
<0
0 25 50 75 10B 125 150 175 1 10 100
Lead Temperature (“(3) Number 0' Cycles at 60 HZ
Fig. 1 — Maximum Forward Current Derating Curve Fig. 2 — Maximum Non-Repetitive Peak Forward Surge Current
Revision: 15-Aug-13 2 Document Number: 88585
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.Com, DiodesEurope@vishay.Com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.comzdoo?91000
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