参数资料
型号: EL1509CS-T7
厂商: Intersil
文件页数: 8/10页
文件大小: 0K
描述: IC LINE DRIVER CPE ADSL 8-SOIC
标准包装: 1,000
类型: 驱动器
驱动器/接收器数: 1/0
电源电压: 5 V ~ 12 V
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
7
FN7015.2
March 26, 2007
Applications Information
Product Description
The EL1509 is a dual operational amplifier designed for
customer premise line driving in DMT ADSL solutions. It is a
dual current mode feedback amplifier with low distortion
while drawing moderately low supply current. It is built using
Elantec's proprietary complimentary bipolar process and is
offered in industry standard pin-outs. Due to the current
feedback architecture, the EL1509 closed-loop 3dB
bandwidth is dependent on the value of the feedback
resistor. First the desired bandwidth is selected by choosing
the feedback resistor, RF, and then the gain is set by picking
the gain resistor, RG. The curves at the beginning of the
Typical Performance Curves section show the effect of
varying both RF and RG. The 3dB bandwidth is somewhat
dependent on the power supply voltage.
Power Supply Bypassing and Printed Circuit
Board Layout
As with any high frequency device, good printed circuit
board layout is necessary for optimum performance. Ground
plane construction is highly recommended. Lead lengths
should be as short as possible, below ”. The power supply
pins must be well bypassed to reduce the risk of oscillation.
A 1.0F tantalum capacitor in parallel with a 0.01F ceramic
capacitor is adequate for each supply pin.
For good AC performance, parasitic capacitances should be
kept to a minimum, especially at the inverting input. This
implies keeping the ground plane away from this pin. Carbon
resistors are acceptable, while use of wire-wound resistors
should not be used because of their parasitic inductance.
Similarly, capacitors should be low inductance for best
performance.
FIGURE 25. TRANSIMEDANCE vs TEMPERATURE
FIGURE 26. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 27. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Typical Performance Curves
3
0
2
TRANSIMPEDANCE
(M
Ω
)
1
0.5
1.5
2.5
TEMPERATURE (°C)
-50
100
150
-25
0
50
125
25
75
JEDEC JESD51-3 AND SEMI G42-88 (SINGLE
LAYER) TEST BOARD
0.9
0
AMBIENT TEMPERATURE (°C)
POWE
R
DI
SSI
PATI
ON
(
W
)
0.2
0.8
0.4
0.6
0.1
0.3
0.5
0.7
0
150
50
100
125
25
75 85
SO
8
&
DF
N8
16
0°C
/W
781mW
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD (DFN EXPOSED
DIEPAD SOLDERED TO PCB PER JESD51-5)
3.5
3
0
AMBIENT TEMPERATURE (°C)
POWE
R
DI
SSI
PATI
ON
(W)
0150
50
100
2
2.5
1
1.5
0.5
125
25
75 85
DF
N8
43
°C
/W
SO8
110°C
/W
2.907W
1.136W
EL1509
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