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参数资料
| 型号： | EL2008C |
| 英文描述： | 55 MHz 1 Amp Buffer Amplifier |
| 中文描述： | 55兆赫1安培缓冲放大器 |
| 文件页数： | 9/12页 |
| 文件大小： | 446K |
| 代理商： | EL2008C |
6
EL2008C
55 MHz 1 Amp Buffer Amplifier
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20
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C
Burn-In Circuit
Applications Information
The EL2008C is a monolithic buffer amplifier built on
Elantec's proprietary dielectric isolation process that
produces NPN and PNP transistors with essentially
identical DC and AC characteristics. The EL2008C
takes full advantage of the complementary process with
a unique circuit topology.
Elantec has applied for two patents based on the
EL2008C's topology. The patents relate to the base drive
and feedback mechanism in the buffer. This feedback
makes 3000 V/s slew rates with 10
load possible with
modest supply current.
Power Supplies
The EL2008C may be operated with single or split sup-
plies with total voltage difference between 10V (±5V)
and 36V (±18V). However, bandwidth, slew rate and
output impedance are affected by total supply voltages
below 20V (±10V) as shown by the characteristic
curves. It is not necessary to use equal split value sup-
plies. For example -5V and +12V would be excellent for
signals from -2V to +9V.
Bypass capacitors from each supply pin to ground are
highly recommended to reduce supply ringing and the
interference it can cause. At a minimum a 10 F tanta-
lum capacitor in parallel with a 0.1 F capacitor with
short leads should be used for both supplies.
Input Characteristics
The input to the EL2008C looks like a resistance in par-
allel with about 25 pF in addition to a DC bias current.
The DC bias current is due to the mismatch in beta and
collector current between the NPN and PNP transistors
connected to the input pin. The bias current can be either
positive or negative. The change in input current with
input voltage (RIN) is affected by the output load, beta
and the internal boost. RIN can actually appear negative
over portions of the input range in some units. A few
typical input current (IIN) curves are shown in the char-
acteristic curves.
Internal clamp diodes from the input to the output are
provided. These diodes protect the transistor base emit-
ter junctions and limit the boost current during slew to
avoid saturation of internal transistors. The diodes begin
conduction at about ±2.5V input to output differential.
When that happens the input resistance drops dramati-
cally. The diodes are rated at 50 mA. When conducting
相关PDF资料 |
PDF描述 |
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| EL2008CT | 55 MHz 1 Amp Buffer Amplifier |
| EL2018CH | Analog Comparator |
| EL2018CJ | Analog Comparator |
| EL2018D | Analog Comparator |
| EL2018H | Analog Comparator |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EL2008CT | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:55MHz 1 Amp Buffer Amplifier |
| EL2008D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog Buffer/Voltage Follower |
| EL2009C | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:90 MHz 1 Amp Buffer Amplifier |
| EL2009CT | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:90 MHz 1 Amp Buffer Amplifier |
| EL2009D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog Buffer/Voltage Follower |
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