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参数资料
| 型号： | EL2075 |
| 英文描述： | 2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| 中文描述： | 2GHz的增益带宽积增益的10稳定运算放大器 |
| 文件页数： | 10/11页 |
| 文件大小： | 466K |
| 代理商： | EL2075 |
8
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
E
L
20
75
C
Applications Information
Product Description
The EL2075C is a wideband monolithic operational
amplifier built on a high-speed complementary bipolar
process. The EL2075C uses a classical voltage-feedback
topology which allows it to be used in a variety of appli-
cations requiring a noise gain
≥10 where current-
feedback amplifiers are not appropriate because of
restrictions placed upon the feedback element used with
the amplifier. The conventional topology of the
EL2075C allows, for example, a capacitor to be placed
in the feedback path, making it an excellent choice for
applications such as active filters, sample-and-holds, or
integrators. Similarly, because of the ability to use
diodes in the feedback network, the EL2075C is an
excellent choice for applications such as log amplifiers.
The EL2075C also has excellent DC specifications:
200V, VOS, 2A IB, 0.1A IOS, and 90dB of CMRR.
These specifications allow the EL2075C to be used in
DC-sensitive applications such as difference amplifiers.
Furthermore, the current noise of the EL2075C is only
3.2 pA/
√Hz, making it an excellent choice for high-sen-
sitivity transimpedance amplifier configurations.
Gain-Bandwidth Product
The EL2075C has a gain-bandwidth product of 2GHz.
For gains greater than 40, its closed-loop -3dB bandwidth
is approximately equal to the gain-bandwidth product
divided by the noise gain of the circuit. For gains less
than 40, higher-order poles in the amplifier's transfer
function contribute to even higher closed loop band-
widths. For example, the EL2075C has a -3dB bandwidth
of 400MHz at a gain of +10, dropping to 200MHz at a
gain of +20. It is important to note that the EL2075C has
been designed so that this “extra” bandwidth in low-gain
applications does not come at the expense of stability. As
seen in the typical performance curves, the EL2075C in a
gain of +10 only exhibits 1.5dB of peaking with a 100
load.
Output Drive Capability
The EL2075C has been optimized to drive 50
and 75
loads. It can easily drive 6VPP into a 50 load. This high
output drive capability makes the EL2075C an ideal
choice for RF and IF applications. Furthermore, the cur-
rent drive of the EL2075C remains a minimum of 50mA
at low temperatures. The EL2075C is current-limited at
the output, allowing it to withstand momentary shorts to
ground. However, power dissipation with the output
shorted can be in excess of the power-dissipation capa-
bilities of the package.
Capacitive Loads
Although the EL2075C has been optimized to drive
resistive loads as low as 50
, capacitive loads will
decrease the amplifier's phase margin which may result
in peaking, overshoot, and possible oscillation. For opti-
mum AC performance, capacitive loads should be
reduced as much as possible or isolated via a series out-
put resistor. Coax lines can be driven, as long as they are
terminated with their characteristic impedance. When
properly terminated, the capacitance of coaxial cable
will not add to the capacitive load seen by the amplifier.
Capacitive loads greater than 10pF should be buffered
with a series resistor (Rs) to isolate the load capacitance
from the amplifier output. A curve of recommended Rs
vs Cload has been included for reference. Values of Rs
were chosen to maximize resulting bandwidth without
additional peaking.
Printed-Circuit Layout
As with any high-frequency device, good PCB layout is
necessary for optimum performance. Ground-plane con-
struction is highly recommended, as is good power
supply bypassing. A 1F–10F tantalum capacitor is
recommended in parallel with a 0.01F ceramic capaci-
tor. All lead lengths should be as short as possible, and
all bypass capacitors should be as close to the device
pins as possible. Parasitic capacitances should be kept to
an absolute minimum at both inputs and at the output.
Resistor values should be kept under 1000
to 2000
because of the RC time constants associated with the
parasitic capacitance. Metal-film and carbon resistors
are both acceptable, use of wire-wound resistors is not
recommended because of parasitic inductance. Simi-
larly, capacitors should be low-inductance for best
performance. If possible, solder the EL2075C directly to
the PC board without a socket. Even high quality sockets
相关PDF资料 |
PDF描述 |
|---|---|
| EL2075CN | 2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2075CS | 2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2082CJ | Analog Multiplier |
| EL2082J | Analog Multiplier |
| EL2082CN | Current-Mode Multiplier |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EL2075C | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2075CN | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2075CS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2075J/883B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Voltage-Feedback Operational Amplifier |
| EL207-V | 功能描述:晶体管输出光电耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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