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参数资料
| 型号： | EL2125C |
| 英文描述： | Ultra-low Noise, Low Power, Wideband Amplifier |
| 中文描述： | 超低噪声，低功耗，宽带放大器 |
| 文件页数： | 3/10页 |
| 文件大小： | 283K |
| 代理商： | EL2125C |
2
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
E
L
21
25
C
-
P
re
lim
in
ar
y
Absolute Maximum Ratings (T
A = 25°C)
VS+ to VS-
33V
Continuous Output Current
40mA
Any Input
VS- - 0.3V to VS+ + 0.3V
Power Dissipation
See Curves
Operating Temperature
-45°C to +85°C
Storage Temperature
-60°C to +150°C
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS = ±5V, TA = 25°C, RF = 180, RG = 20, RL = 500 unless otherwise specified.
Parameter
Description
Conditions
Min
Typ
Max
Unit
DC Performance
VOS
Input Offset Voltage (SO8 & PDIP8)
-0.2
2
mV
Input Offset Voltage (SOT23-5)
3
mV
TCVOS
Offset Voltage Temperature Coefficient
TBD
V/°C
IB
Input Bias Current
-30
-21
A
IOS
Input Bias Current Offset
0.2
1
A
TCIB
Input Bias Current Temperature Coefficient
TBD
nA/°C
CIN
Input Capacitance
2.2
pF
AVOL
Open Loop Gain
65
81
dB
PSRR
Power Supply Rejection Ratio [1]
75
96
dB
CMRR
Common Mode Rejection Ratio [2]
65
100
dB
CMIR
Common Mode Input Range
V
VOUT
Output Voltage Swing
No load, RF = 1k
3.5
3.8
V
VOUTL
Output Voltage Swing
RL = 100
2.8
3.1
V
IOUT
Output Short Circuit Current [3]
80
100
mA
IS
Supply Current
10.1
12
mA
AC Performance - RG = 20, CL = 5pF
BW
-3dB Bandwidth
175
MHz
BW ±0.1dB
±0.1dB Bandwidth
34
MHz
BW ±1dB
±1dB Bandwidth
150
MHz
Peaking
0.4
dB
SR
Slew Rate
VOUT = 2VPP, measured at 20% to 80%
TBD
190
V/s
OS
Overshoot, 4Vpk-pk Output Square Wave
Positive
0.6
%
Negative
2.7
%
TS
Settling Time to 0.1% of ±1V Pulse
TBD
ns
VN
Voltage Noise Spectral Density
0.83
nV/
√Hz
IN
Current Noise Spectral Density
2.4
pA/
√Hz
HD2
2nd Harmonic Distortion [4]
TBD
dBc
HD3
3rd Harmonic Distortion [4]
TBD
dBc
THD
Total Harmonic Distortion [5]
TBD
dBc
IMD
Intermodulation Distortion [6]
TBD
%
1. Measured by moving the supplies from ±4V to ±6V
2. Measured by moving the inputs from +3.5V to -4.4V
3. Pulse test only
4. Frequency = 10MHz, VOUT = 1Vpk-pk, into 100 and 5pF load
5. Frequency = 20MHz, VOUT = -20dBm (0.0274VRMS) into 500 and 15pF load
6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, RLOAD = 500 and 15pF
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相关代理商/技术参数 |
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| EL2125CN | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:Ultra-low Noise, Low Power, Wideband Amplifier |
| EL2125CS | 功能描述:IC AMP WIDEBAND LP LN 8-SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:- 放大器类型:通用 电路数:2 输出类型:满摆幅 转换速率:1.8 V/µs 增益带宽积:6.5MHz -3db带宽:4.5MHz 电流 - 输入偏压:5nA 电压 - 输入偏移:100µV 电流 - 电源:65µA 电流 - 输出 / 通道:35mA 电压 - 电源，单路/双路(±):1.8 V ~ 5.25 V，±0.9 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 供应商设备封装:10-MSOP 包装:管件 |
| EL2125CS-T13 | 功能描述:IC AMP ULT LO NOISE/POWER 8-SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1 系列:- 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:2pA 电压 - 输入偏移:1000µV 电流 - 电源:85µA 电流 - 输出 / 通道:20mA 电压 - 电源，单路/双路(±):1.8 V ~ 6 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOICN 包装:剪切带 (CT) 产品目录页面:680 (CN2011-ZH PDF) 其它名称:MCP6L04T-E/SLCT |
| EL2125CS-T7 | 功能描述:IC AMP ULT LO NOISE/POWER 8-SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1 系列:- 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:2pA 电压 - 输入偏移:1000µV 电流 - 电源:85µA 电流 - 输出 / 通道:20mA 电压 - 电源，单路/双路(±):1.8 V ~ 6 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOICN 包装:剪切带 (CT) 产品目录页面:680 (CN2011-ZH PDF) 其它名称:MCP6L04T-E/SLCT |
| EL2125CSZ | 功能描述:运算放大器 - 运放 EL2125CSZ LW NOISE REC A=10 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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