参数资料
| 型号： | EL2125CS-T7 |
| 厂商： | Intersil |
| 文件页数： | 5/16页 |
| 文件大小： | 0K |
| 描述： | IC AMP ULT LO NOISE/POWER 8-SOIC |
| 标准包装： | 1,000 |
| 放大器类型： | 电压反馈 |
| 电路数： | 1 |
| 转换速率： | 185 V/µs |
| -3db带宽： | 220MHz |
| 电流 - 输入偏压： | 22µA |
| 电压 - 输入偏移： | 600µV |
| 电流 - 电源： | 10.8mA |
| 电流 - 输出 / 通道： | 250mA |
| 电压 - 电源，单路/双路(±)： | 5 V ~ 30 V，±2.5 V ~ 15 V |
| 工作温度： | -45°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
13
FN7045.3
May 4, 2007
Applications Information
Product Description
The EL2125 is an ultra-low noise, wideband monolithic
operational amplifier built on Elantec's proprietary high
speed complementary bipolar process. It features
0.83nV/
√Hz input voltage noise, 200V offset voltage, and
73dB THD. It is intended for use in systems such as
ultrasound imaging where very small signals are needed to
be amplified. The EL2125 also has excellent DC
specifications: 200V VOS, 22A IB, 0.4A IOS, and 106dB
CMRR. These specifications allow the EL2125 to be used in
DC-sensitive applications such as difference amplifiers.
Gain-Bandwidth Product
The EL2125 has a gain-bandwidth product of 800MHz at
±5V. For gains greater than 20, its closed-loop -3dB
bandwidth is approximately equal to the gain-bandwidth
product divided by the small signal gain of the circuit. For
gains less than 20, higher-order poles in the amplifier's
transfer function contribute to even higher closed-loop
bandwidths. For example, the EL2125 has a -3dB bandwidth
of 175MHz at a gain of 10 and decreases to 40MHz at gain
of 20. It is important to note that the extra bandwidth at lower
gain does not come at the expenses of stability. Even though
the EL2125 is designed for gain > 10 with external
compensation, the device can also operate at lower gain
settings. The RC network shown in Figure 50 reduces the
feedback gain at high frequency and thus maintains the
amplifier stability. R values must be less than RF divided by
9 and 1 divided by 2
πRC must be less than 400MHz.
FIGURE 50.
Choice of Feedback Resistor, RF
The feedback resistor forms a pole with the input
capacitance. As this pole becomes larger, phase margin is
reduced. This increases ringing in the time domain and
peaking in the frequency domain. Therefore, RF has some
maximum value which should not be exceeded for optimum
performance. If a large value of RF must be used, a small
capacitor in the few pF range in parallel with RF can help to
reduce this ringing and peaking at the expense of reducing
the bandwidth. Frequency response curves for various RF
values are shown the in typical performance curves section
of this data sheet.
Pin Descriptions
5 LD SOT-23
8 LD SO
PIN NAME
PIN FUNCTION
EQUIVALENT CIRCUIT
16
VOUT
Output
CIRCUIT 1
2
4
VS-
Supply
3
VINA+
Input
CIRCUIT 2
4
2
VINA-
Input
Reference Circuit 2
5
7
VS+
Supply
VOUT
VS+
VIN-
VIN+
VS+
VS-
-
+
RF
R
C
VIN
VOUT
EL2125
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EL2125CSZ | 功能描述:运算放大器 - 运放 EL2125CSZ LW NOISE REC A=10 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| EL2125CSZ-T13 | 功能描述:高速运算放大器 EL2125CSZ LW NOISE CVR A=10 RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| EL2125CSZ-T7 | 功能描述:高速运算放大器 EL2125CSZ LW NOISE CVR A=11 RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| EL2125CW | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:Ultra-low Noise, Low Power, Wideband Amplifier |
| EL2125CW-T13 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Amplifier. Other |
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