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参数资料
| 型号： | EL2227C |
| 英文描述： | Dual Very Low Noise Amplifier |
| 中文描述： | 双极低噪声放大器 |
| 文件页数： | 6/15页 |
| 文件大小： | 182K |
| 代理商： | EL2227C |
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EL2227C
Dual Very Low Noise Amplifier
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2
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C
bandwidth product divided by the noise gain of the cir-
cuit. For gains less than 2, higher-order poles in the
amplifiers' transfer function contribute to even higher
closed loop bandwidths. For example, the EL2227C
have a -3dB bandwidth of 115MHz at a gain of +2, drop-
ping to 28MHz at a gain of +5. It is important to note
that the EL2227C have been designed so that this
“extra” bandwidth in low-gain applications does not
come at the expense of stability. As seen in the typical
performance curves, the EL2227C in a gain of +2 only
exhibit 0.5dB of peaking with a 1000
load.
Output Drive Capability
The EL2227C have been designed to drive low imped-
ance loads. They can easily drive 6VPP into a 500 load.
This high output drive capability makes the EL2227C an
ideal choice for RF, IF and video applications.
Printed-Circuit Layout
The EL2227C are well behaved, and easy to apply in
most applications. However, a few simple techniques
will help assure rapid, high quality results. As with any
high-frequency device, good PCB layout is necessary
for optimum performance. Ground-plane construction is
highly recommended, as is good power supply bypass-
ing. A 0.1F ceramic capacitor is recommended for
bypassing both supplies. Lead lengths should be as short
as possible, and bypass capacitors should be as close to
the device pins as possible. For good AC performance,
parasitic capacitances should be kept to a minimum at
both inputs and at the output. Resistor values should be
kept under 5k
because of the RC time constants associ-
ated with the parasitic capacitance. Metal-film and
carbon resistors are both acceptable, use of wire-wound
resistors is not recommended because of their parasitic
inductance. Similarly, capacitors should be low-induc-
tance for best performance.
相关PDF资料 |
PDF描述 |
|---|---|
| EL2227CS | Dual Very Low Noise Amplifier |
| EL2227CS-T13 | SUR ABSORB ZNR VF 27V 125A SMD |
| EL2227CS-T7 | SUR ABSORB ZNR VF 33V 125A SMD |
| EL2227CY | SUR ABSORB ZNR VF 390V 300A SMD |
| EL2228CS-T13 | Dual Low Noise Amplifier |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EL2227CS | 功能描述:IC AMP DUAL LOW NOISE 8-SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:- 放大器类型:通用 电路数:2 输出类型:满摆幅 转换速率:1.8 V/µs 增益带宽积:6.5MHz -3db带宽:4.5MHz 电流 - 输入偏压:5nA 电压 - 输入偏移:100µV 电流 - 电源:65µA 电流 - 输出 / 通道:35mA 电压 - 电源，单路/双路(±):1.8 V ~ 5.25 V，±0.9 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 供应商设备封装:10-MSOP 包装:管件 |
| EL2227CS-T13 | 功能描述:IC AMP DUAL LOW NOISE 8-SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1 系列:- 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:2pA 电压 - 输入偏移:1000µV 电流 - 电源:85µA 电流 - 输出 / 通道:20mA 电压 - 电源，单路/双路(±):1.8 V ~ 6 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOICN 包装:剪切带 (CT) 产品目录页面:680 (CN2011-ZH PDF) 其它名称:MCP6L04T-E/SLCT |
| EL2227CS-T7 | 功能描述:IC AMP DUAL LOW NOISE 8-SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1 系列:- 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:2pA 电压 - 输入偏移:1000µV 电流 - 电源:85µA 电流 - 输出 / 通道:20mA 电压 - 电源，单路/双路(±):1.8 V ~ 6 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOICN 包装:剪切带 (CT) 产品目录页面:680 (CN2011-ZH PDF) 其它名称:MCP6L04T-E/SLCT |
| EL2227CSZ | 功能描述:高速运算放大器 EL2227CSZ VERY LW NOISE DL AMP RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| EL2227CSZ-T13 | 功能描述:高速运算放大器 EL2227CSZ VERY LW NOISE DL AMP RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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