参数资料
| 型号： | EL5100IS-T13 |
| 厂商： | Intersil |
| 文件页数： | 4/15页 |
| 文件大小： | 0K |
| 描述： | IC VFA SLEW SINGLE 200MHZ 8-SOIC |
| 标准包装： | 2,500 |
| 放大器类型： | 电压反馈 |
| 电路数： | 1 |
| 转换速率： | 2200 V/µs |
| -3db带宽： | 200MHz |
| 电流 - 输入偏压： | 2µA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 2.5mA |
| 电流 - 输出 / 通道： | 100mA |
| 电压 - 电源，单路/双路(±)： | 3.3 V ~ 12 V，±1.65 V ~ 6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
12
FN7330.3
May 3, 2007
The reason for that is the very small but not zero value serial
inductance of the capacitor.
The capacitor will behave as a capacitor up to its resonance
frequency, above the resonance frequency it will behave as
an inductor.
Just 1nHy inductance serial with 1nF capacitance will have
serial resonance at:
C = 1nF, L = 1nHy, F = 159 MHz
And an other 1nHy is very easy to get together with the
inductance of traces on the pcb, and therefore you could
encounter resonances from ca 50MHz and above anywhere.
So if the amplifier has a bandwidth of a few hundred MHz,
the proper power supply by-pass could become a serious if
not difficult task.
Intuitively, you would use capacitors value 0.1F parallel
with a few F tantalum, and to cure the effect of it’s serial
resonance put a smaller one parallel to it.
The result will surprise to you, because you will get even
something worse than without the small capacitor.
What is happening there? Just look what we get:
Above its serial resonance C2* the ideal capacitance of C2 is
a short, the Tantalum capacitor for high frequencies is not
effective, the left over is C1 capacitor and L1 + L2 inductors,
we get a parallel tank circuit, which is at it’s resonance a high
impedance path and do not carry any high frequency
current, it does not work as bypass at all!
The impedance of a parallel tank circuit at resonance is
dependent from it’s Q. High Q high impedance.
The Q of a parallel tank circuit could be reduced by
bypassing it with a resistor, or adding a resistor in serial to
one of the reactive components. Since the bypassing would
short the DC supply we do have to go to add resistor in serial
to the reactive component, we will ad a resistor serial with
the inductor. (See Figure 33.)
The final power supply bypass circuit will look:
FIGURE 31.
Ci
Li
Z
F
F RES
IN
DUCTIVE
CA
P
ACITIVE
C
L
2
1
F
×
π
=
C1
1n
C3
22F
C2
0.1F
L2
L1
C1
1n
C3
22F
C2
0.1F
=
<
FIGURE 32.
C3
0.1F
L3
C1
Z
F
F RES
R3 = 3
R3 = 0
R3
2 to 3
Ω
FIGURE 33.
C1
1n
C11
22F
R10
3R3
C12
33nF
Vs+
FIGURE 34.
EL5100, EL5101, EL5300
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EL5100IS-T7 | 功能描述:IC OP AMP HS V-FEEDBACK 8-SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1,000 系列:- 放大器类型:电压反馈 电路数:4 输出类型:满摆幅 转换速率:33 V/µs 增益带宽积:20MHz -3db带宽:30MHz 电流 - 输入偏压:2nA 电压 - 输入偏移:3000µV 电流 - 电源:2.5mA 电流 - 输出 / 通道:30mA 电压 - 电源，单路/双路(±):4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOIC 包装:带卷 (TR) |
| EL5100ISZ | 功能描述:高速运算放大器 EL5100ISZ SINGLE 350 MHZ SEVFAW ENABLE RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| EL5100ISZ-T13 | 功能描述:高速运算放大器 EL5100ISZ SINGLE 350 MHZ SEVFAW ENABLE RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| EL5100ISZ-T7 | 功能描述:高速运算放大器 EL5100ISZ SINGLE 350 MHZ SEVFAW ENABLE RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| EL5100IW-T7 | 功能描述:运算放大器 - 运放 HS V-FEEDBACK RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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