参数资料
| 型号： | EL5108IS |
| 厂商： | Intersil |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | IC OP AMP HS VF 450MHZ 8-SOIC |
| 标准包装： | 97 |
| 放大器类型： | 通用 |
| 电路数： | 1 |
| 转换速率： | 4500 V/µs |
| -3db带宽： | 450MHz |
| 电流 - 输入偏压： | 2µA |
| 电压 - 输入偏移： | 3000µV |
| 电流 - 电源： | 3.7mA |
| 电流 - 输出 / 通道： | 135mA |
| 电压 - 电源，单路/双路(±)： | 5 V ~ 12 V，±2.5 V ~ 6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
8
FN7358.7
August 10, 2010
Applications Information
Product Description
The EL5108 and EL5308 are fixed gain amplifiers that offer
a wide -3dB bandwidth of 450MHz and a low supply current
of 3.5mA per amplifier. They work with supply voltages
ranging from a single 5V to 10V and they are also capable of
swinging to within 1.2V of either supply on the output. These
combinations of high bandwidth, low power, and high slew
rate make the EL5108 and EL5308 the ideal choice for many
low-power/high-bandwidth applications such as portable,
handheld, or battery-powered equipment.
For varying bandwidth and higher gains, consider the
EL5166 with 1GHz on a 9mA supply current or the EL5164
with 600MHz on a 3.5mA supply current. Versions include
single, dual, and triple amp packages with 6 Ld SOT-23,
16 Ld QSOP, and 8 Ld SOIC or 16 Ld SOIC outlines.
Power Supply Bypassing and Printed Circuit
Board Layout
As with any high frequency device, good printed circuit
board layout is necessary for optimum performance. Low
impedance ground plane construction is essential. Surface
mount components are recommended, but if leaded
components are used, lead lengths should be as short as
possible. The power supply pins must be well bypassed to
reduce the risk of oscillation. The combination of a 4.7F
tantalum capacitor in parallel with a 0.01F capacitor has
been shown to work well when placed at each supply pin.
Disable/Power-Down
The EL5108 and EL5308 amplifiers can be disabled and
placing their outputs in a high impedance state. When
disabled, the amplifier supply current is reduced to <25A.
The EL5108 and EL5308 are disabled when the CE pin is
pulled up to within 1V of the positive supply. Similarly, the
amplifier is enabled by floating or pulling its CE pin to at least
3V below the positive supply. For ±5V supply, this means
that the amplifier will be enabled when CE is 2V or less, and
disabled when CE is above 4V. Although the logic levels are
not standard TTL, this choice of logic voltages allow the
EL5108 and EL5308 to be enabled by tying CE to ground,
even in 5V single supply applications. The CE pins can be
driven from CMOS outputs.
Gain Setting
The EL5108 and EL5308 are built with internal feedback and
gain resistors. The internal feedback resistors have equal
value; as a result, the amplifier can be configured into gain of
+1, -1, and +2 without any external resistors. Figure 21
shows the amplifier in gain of +2 configuration. The gain
error is ±2% maximum. Figure 22 shows the amplifier in
gain-of-1 configuration. For gain of +1, IN+ and IN- should
be connected together as shown in Figure 23. This
configuration avoids the effects of any parasitic capacitance
on the IN- pin. Since the internal feedback and gain resistors
change with temperature and process, external resistor
should not be used to adjust the gain settings.
FIGURE 19. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 20. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Typical Performance Curves (Continued)
1
0.9
0.8
0.6
0.4
0.1
0
25
50
75
100
150
AMBIENT TEMPERATURE (°C)
POWE
R
DI
SSI
PATI
ON
(W)
125
85
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.2
0.7
0.3
0.5
909mW
625mW
633mW
391mW
SO16 (0.150”)
θJA=110°C/W
SO8
θJA=160°C/W
QSOP16
θJA=158°C/W
SOT23-6
θJA=256°C/W
AMBIENT TEMPERATURE (°C)
0
0.4
1.4
1.2
1
0.8
0.6
0.2
0
25
50
75
100
150
P
O
WER
DIS
S
IPATION
(W
)
125
85
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.1
1.250W
QSOP16
θJA=112°C/W
909mW
893mW
435mW
SO8
θJA=110°C/W
SOT23-6
θJA=230°C/W
SO16 (0.150”)
θJA=80°C/W
FIGURE 21. AV = +2
-
+
325
Ω
325
Ω
IN-
IN+
FIGURE 22. AV = -1
-
+
325
Ω
325
Ω
IN-
GND
EL5108, EL5308
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EL5108IS-T13 | 功能描述:IC AMP FGA SGL 450MHZ 8-SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:- 放大器类型:通用 电路数:2 输出类型:满摆幅 转换速率:1.8 V/µs 增益带宽积:6.5MHz -3db带宽:4.5MHz 电流 - 输入偏压:5nA 电压 - 输入偏移:100µV 电流 - 电源:65µA 电流 - 输出 / 通道:35mA 电压 - 电源，单路/双路(±):1.8 V ~ 5.25 V，±0.9 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 供应商设备封装:10-MSOP 包装:管件 |
| EL5108IS-T7 | 功能描述:IC AMP FGA SGL 450MHZ 8-SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1,000 系列:- 放大器类型:电压反馈 电路数:4 输出类型:满摆幅 转换速率:33 V/µs 增益带宽积:20MHz -3db带宽:30MHz 电流 - 输入偏压:2nA 电压 - 输入偏移:3000µV 电流 - 电源:2.5mA 电流 - 输出 / 通道:30mA 电压 - 电源，单路/双路(±):4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOIC 包装:带卷 (TR) |
| EL5108ISZ | 功能描述:高速运算放大器 EL5108ISZ SINGLE 520 MHZ FGAW ENABLE RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| EL5108ISZ-T13 | 功能描述:高速运算放大器 EL5108ISZ SINGLE 520 MHZ FGAW ENABLE RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| EL5108ISZ-T7 | 功能描述:高速运算放大器 EL5108ISZ SINGLE 520 MHZ FGAW ENABLE RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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