参数资料
型号: EL5111IYE-T13
厂商: Intersil
文件页数: 5/18页
文件大小: 0K
描述: IC OPAMP SGL R-R 60MHZ 8-HMSOP
标准包装: 2,500
放大器类型: 电压反馈
电路数: 1
输出类型: 满摆幅
转换速率: 75 V/µs
增益带宽积: 32MHz
-3db带宽: 60MHz
电流 - 输入偏压: 2nA
电压 - 输入偏移: 3000µV
电流 - 电源: 2.5mA
电流 - 输出 / 通道: 65mA
电压 - 电源,单路/双路(±): 4.5 V ~ 16.5 V,±2.25 V ~ 8.25 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-VSSOP,8-MSOP(0.118",3.00mm 宽)裸露焊盘
供应商设备封装: 8-HMSOP
包装: 带卷 (TR)
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY (SINGLE LAYER) TEST BOARD
P
O
WER
DISSIP
A
TION
(W)
0.300
0.250
0.200
0.150
0.100
0.050
0.000
0.350
AMBIENT TEMPERATURE (°C)
0
25
50
75
100
125
85
150
290mW
TSOT5
θ
JA = +345°C/W
FIGURE 33. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 34.
0.6
0.5
0.4
0.3
0.2
0.1
0.0
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD
483mW
TSOT5
AMBIENT TEMPERATURE (°C)
POW
E
R
DI
SSI
P
A
TI
ON
(W)
0
25
50
75
100
125
85
150
θJA = +207°C/W
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.6
0.4
0.3
0.2
0.1
0
25
50
75
100
125
AMBIENT TEMPERATURE (°C)
P
O
WE
R
DI
SSI
PATIO
N
(W)
85
486mW
θ
JA
=
+2
06
°C
/W
HM
SO
P8
0.5
FIGURE 35. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 36.
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1
0.9
0.6
0.4
0.3
0.2
0.1
0
25
50
75
100
125
AMBIENT TEMPERATURE (°C)
P
O
WE
R
DI
SSI
PATIO
N
(W)
85
870mW
θ
JA
=
+1
15
°C
/W
HM
SO
P8
0.8
0.5
0.7
PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
13
FN7119.7
May 7, 2007
Unused Amplifiers
It is recommended that any unused amplifiers in a dual and
a quad package be configured as a unity gain follower. The
inverting input should be directly connected to the output
and the non-inverting input tied to the ground plane.
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5111, EL5211, and EL5411 can provide gain at high
frequency. As with any high-frequency device, good printed
circuit board layout is necessary for optimum performance.
Ground plane construction is highly recommended, lead
lengths should be as short as possible and the power supply
pins must be well bypassed to reduce the risk of oscillation.
For normal single supply operation, where the VS- pin is
connected to ground, a 0.1F ceramic capacitor should be
placed from VS+ to pin to VS- pin. A 4.7F tantalum
capacitor should then be connected in parallel, placed in the
region of the amplifier. One 4.7F capacitor may be used for
multiple devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are to be
used.
EL5111, EL5211, EL5411
相关PDF资料
PDF描述
3410.0027.04 FUSE MGA 125V 500MA
3410.0027.03 FUSE MGA 125V 500MA
TA45-ABTRF030C0-AZZ31 CIRCUIT BRKR THERMAL 3A 2POLE
EL5111IYE IC OPAMP SGL R-R 60MHZ 8-HMSOP
3410.0025.04 FUSE MGA 125V 375MA
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EL5111IYE-T7 功能描述:IC OPAMP SGL R-R 60MHZ 8-HMSOP RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:- 放大器类型:通用 电路数:2 输出类型:满摆幅 转换速率:1.8 V/µs 增益带宽积:6.5MHz -3db带宽:4.5MHz 电流 - 输入偏压:5nA 电压 - 输入偏移:100µV 电流 - 电源:65µA 电流 - 输出 / 通道:35mA 电压 - 电源,单路/双路(±):1.8 V ~ 5.25 V,±0.9 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-TFSOP,10-MSOP(0.118",3.00mm 宽) 供应商设备封装:10-MSOP 包装:管件
EL5111IYEZ 功能描述:高速运算放大器 EL5111IYEZ 60 MHZ R2R I/O AMP RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
EL5111IYEZ-T13 功能描述:高速运算放大器 EL5111IYEZ 60 MHZ R2R I/O AMP RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
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