参数资料
型号: EL5211TIYEZ-T7
厂商: Intersil
文件页数: 9/15页
文件大小: 0K
描述: IC OPAMP GP R-R 60MHZ 8MSOP
标准包装: 1
放大器类型: 电压反馈
电路数: 2
输出类型: 满摆幅
转换速率: 100 V/µs
增益带宽积: 32MHz
-3db带宽: 60MHz
电流 - 输入偏压: 2nA
电压 - 输入偏移: 7000µV
电流 - 电源: 6mA
电流 - 输出 / 通道: 65mA
电压 - 电源,单路/双路(±): 4.5 V ~ 19 V,±2.25 V ~ 9.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-VSSOP,8-MSOP(0.118",3.00mm 宽)裸露焊盘
供应商设备封装: 8-HMSOP
包装: 标准包装
其它名称: EL5211TIYEZ-T7DKR
EL5211T
3
FN6893.0
May 12, 2010
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage between VS+ and VS-. . . . . . . . . . . .+19.8V
Input Voltage Range (VINx+, VINx-) . . . VS- - 0.5V, VS+ + 0.5V
Input Differential Voltage (VINx+ - VINx-) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . (VS+ + 0.5V)-(VS- - 0.5V)
Maximum Continuous Output Current . . . . . . . . . . .±65mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . 3000V
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
8 Ld HMSOP (Notes 4, 5) . . . . . . .
62
13
8 Ld DFN (Notes 4, 5). . . . . . . . . .
58
8
Storage Temperature . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Operating Temperature . . . . . . . . . -40°C to +85°C
Maximum Junction Temperature . . . . . . . . . . . . . . . +150°C
Power Dissipation . . . . . . . . . . . . . . .See Figures 34 and 35
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . .see link below
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact
product reliability and result in failures not covered by warranty.
NOTES:
4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach”
features. See Tech Brief TB379.
5. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications VS+ = +5V, VS- = -5V, RL = 1kΩ to 0V, TA = +25°C, Unless Otherwise Specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN TYP MAX UNIT
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
5
18
mV
TCVOS
Average Offset Voltage Drift (Note 6)
8 Ld HMSOP package
13
μV/°C
8 Ld DFN package
9
μV/°C
IB
Input Bias Current
VCM = 0V
2
60
nA
RIN
Input Impedance
1GΩ
CIN
Input Capacitance
2pF
CMIR
Common-Mode Input Range
-5.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
For VIN from -5.5V to 5.5V
50
73
dB
AVOL
Open-Loop Gain
-4.5V ≤ VOUTx ≤ 4.5V
62
78
dB
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
-4.95 -4.85
V
VOH
Output Swing High
IL = +5mA
4.85 4.95
V
ISC
Short-Circuit Current
VCM = 0V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
±300
mA
IOUT
Output Current
±65
mA
POWER SUPPLY PERFORMANCE
(VS+) - (VS-) Supply Voltage Range
4.5
19
V
IS
Supply Current
VCM = 0V, No load
5.5
7.5
mA
PSRR
Power Supply Rejection Ratio
Supply is moved from ±2.25V to ±9.5V
60
75
dB
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 7)
-4.0V ≤ VOUTx ≤ 4.0V, 20% to 80%
100
V/μs
tS
Settling to +0.1% (Note 8)
AV = +1, VOUTx = 2V step,
RL = 1kΩ || 1kΩ (probe), CL = 1.5pF
85
ns
BW
-3dB Bandwidth
RL = 1kΩ, CL = 1.5pF
60
MHz
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