参数资料
| 型号： | EL5224IREZ |
| 厂商： | Intersil |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC BUFF 12MHZ R-R 8-CH 24-HTSSOP |
| 标准包装： | 62 |
| 放大器类型： | 缓冲器 |
| 电路数： | 8 |
| 输出类型： | 满摆幅 |
| 转换速率： | 15 V/µs |
| 增益带宽积： | 8MHz |
| -3db带宽： | 12MHz |
| 电流 - 输入偏压： | 2nA |
| 电压 - 输入偏移： | 2000µV |
| 电流 - 电源： | 6.8mA |
| 电流 - 输出 / 通道： | 140mA |
| 电压 - 电源，单路/双路(±)： | 4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-TSSOP（0.173"，4.40mm）裸露焊盘 |
| 供应商设备封装： | 24-HTSSOP |
| 包装： | 管件 |
3
NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Absolute Maximum Ratings (TA = 25°C)
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.5V, VS+ +0.5V
Maximum Continuous Output Current (VOUT0-9) . . . . . . . . . . 30mA
Maximum Continuous Output Current (VOUTA). . . . . . . . . . . 150mA
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . . -40°C to +85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
VS+ = +15V, VS- = 0, RL = 10kΩ, RF = RG = 20kΩ, CL = 10pF to 0V, Gain of VCOM = -1, and TA = 25°C Unless
Otherwise Specified
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS (REFERENCE BUFFERS)
VOS
Input Offset Voltage
VCM = 0V
2
14
mV
TCVOS
Average Offset Voltage Drift
(Note 1)
5
V/
°C
IB
Input Bias Current
VCM = 0V
2
50
nA
RIN
Input Impedance
1G
Ω
CIN
Input Capacitance
1.35
pF
AV
Voltage Gain
1V
≤ V
OUT ≤ 14V
0.992
1.008
V/V
INPUT CHARACTERISTICS (VCOM BUFFER)
VOS
Input Offset Voltage
VCM = 7.5V
1
4
mV
TCVOS
Average Offset Voltage Drift
(Note 1)
3
V/
°C
IB
Input Bias Current
VCM = 7.5V
2
100
nA
RIN
Input Impedance
1G
Ω
CIN
Input Capacitance
1.35
pF
VREG
Load Regulation
VCOM = 6V, -100mA < IL < 100mA
-20
+20
mV
OUTPUT CHARACTERISTICS (REFERENCE BUFFERS)
VOL
Output Swing Low
IL = 7.5mA
50
150
mV
VOH
Output Swing High
IL = 7.5mA
14.85
14.95
V
ISC
Short Circuit Current
120
140
mA
OUTPUT CHARACTERISTICS (VCOM BUFFER)
VOL
Output Swing Low
50
Ω to 7.5V
1
1.5
V
VOH
Output Swing High
50
Ω to 7.5V
13.5
14
V
ISC
Short Circuit Current
160
mA
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
Reference buffer VS from 5V to 15V
55
80
dB
VCOM buffer, VS from 5V to 15V
60
100
dB
IS
Total Supply Current
EL5224 (no load)
5
6.8
8
mA
EL5324 (no load)
6
7.8
9.5
mA
EL5424 (no load)
7
8.8
11
mA
DYNAMIC PERFORMANCE (BUFFER AMPLIFIERS)
SR
Slew Rate (Note 2)
-4V
≤ V
OUT ≤ 4V, 20% to 80%
7
15
V/s
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
250
ns
BW
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
12
MHz
EL5224, EL5324, EL5424
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