参数资料
型号: EL5227CR-T7
厂商: Intersil
文件页数: 13/17页
文件大小: 0K
描述: IC BUFFER LP OCT 2.5MHZ 20-TSSOP
标准包装: 1,000
放大器类型: 缓冲器
电路数: 8
输出类型: 满摆幅
转换速率: 2.2 V/µs
-3db带宽: 2.5MHz
电流 - 输入偏压: 2nA
电压 - 输入偏移: 1000µV
电流 - 电源: 1.3mA
电流 - 输出 / 通道: 120mA
电压 - 电源,单路/双路(±): 4.5 V ~ 16.5 V,±2.25 V ~ 8.25 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 20-TSSOP
包装: 带卷 (TR)
5
FN7111.4
May 4, 2007
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage Between VS+ and VS-. . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.5V, VS +0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA
ESD Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 10kΩ, CL = 10pF to 0V, TA = +25°C, Unless Otherwise Specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
1
15
mV
TCVOS
Average Offset Voltage Drift
(Note 1)
5
V/°C
IB
Input Bias Current
VCM = 0V
2
50
nA
RIN
Input Impedance
1G
Ω
CIN
Input Capacitance
1.35
pF
AV
Voltage Gain
-4.5V
≤ VOUT ≤ 4.5V
0.99
1.01
V/V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
-4.95
-4.85
V
VOH
Output Swing High
IL = +5mA
4.85
4.95
V
IOUT (max)
Max Output Current (Note 2)
RL = 10Ω
100
±120
mA
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±7.75V
55
80
dB
IS
Supply Current
No load (EL5127)
0.7
0.9
mA
No load (EL5227)
1.2
1.4
mA
No load (EL5327)
1.4
2
mA
No load (EL5427)
1.6
2.2
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 3)
-4.0V
≤ VOUT ≤ 4.0V, 20% to 80%
0.9
2.2
V/s
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
900
ns
BW
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
2.5
MHz
CS
Channel Separation
f = 100kHz
75
dB
NOTES:
1. Measured over operating temperature range.
2. Instantaneous peak current.
3. Slew rate is measured on rising and falling edges.
EL5127, EL5227, EL5327, EL5427
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