参数资料
型号: EL7515IYZ-T13
厂商: Intersil
文件页数: 8/9页
文件大小: 0K
描述: IC REG BOOST ADJ 0.6A 10MSOP
标准包装: 2,500
类型: 升压(升压)
输出类型: 可调式
输出数: 1
输出电压: 4.5 V ~ 17 V
输入电压: 1.8 V ~ 13.2 V
频率 - 开关: 可调至 1.2MHz
电流 - 输出: 600mA
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
包装: 带卷 (TR)
供应商设备封装: 10-MSOP
EL7515
The boost converter output voltage is determined by the
relationship in Equation 8:
Layout Considerations
The layout is very important for the converter to function
V OUT = V FB × ? 1 + ------ ?
? R 2 ?
? R 1 ?
(EQ. 8)
properly. Power Ground ( ) and Signal Ground ( ) should
be separated to ensure that the high pulse current in the
Power Ground never interferes with the sensitive signals
where V FB slightly changes with V DD . The curve is shown in
this data sheet.
RC Filter
The maximum voltage rating for the VDD pin is 12V and is
recommended to be about 10V for maximum efficiency to
drive the internal MOSFET. The series resistor R 4 in the RC
filter connected to V DD can be utilized to reduce the voltage.
If V O is larger than 10V, then Equation 9 shows:
connected to Signal Ground. They should only be connected
at one point.
The trace connected to pin 8 (FB) is the most sensitive trace.
It needs to be as short as possible and in a “quiet” place,
preferably between PGND or SGND traces.
In addition, the bypass capacitor connected to the VDD pin
needs to be as close to the pin as possible.
The heat of the chip is mainly dissipated through the SGND
R 4 = --------------------
V O – 10
I DD
(EQ. 9)
pin. Maximizing the copper area around it is preferable. In
addition, a solid ground plane is always helpful for the EMI
performance.
where I DD is shown in I DD vs f S curve. Otherwise, R 4 can be
10 Ω to 51 Ω with C 4 = 0.1μF.
Thermal Performance
The EL7515 uses a fused-lead package, which has a
reduced θ JA of +100°C/W on a four-layer board and
+115°C/W on a two-layer board. Maximizing copper around
the ground pins will improve the thermal performance.
This chip also has internal thermal shut-down set at around
+135°C to protect the component.
8
FN7120.2
August 10, 2007
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