参数资料
型号: EL7530EVAL1
厂商: Intersil
文件页数: 2/11页
文件大小: 0K
描述: EVALUATION BOARD FOR EL7530
标准包装: 1
主要目的: DC/DC,步降
输出及类型: 1,非隔离
输出电压: 0.8 ~ 5.5V
电流 - 输出: 600mA
输入电压: 2.5 ~ 5.5V
稳压器拓扑结构: 降压
板类型: 完全填充
已供物品:
已用 IC / 零件: EL7530
Absolute Maximum Ratings (T A = 25°C)
Thermal Information
V IN , V DD , PG to SGND . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
Thermal Resistance (Typical)
θ JA (°C/W)
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (V IN + +0.3V)
SYNC, EN, V O , FB to SGND . . . . . . . . . . . . . -0.3V to (V IN + +0.3V)
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
MSOP Package (Note 1) . . . . . . . . . . . . . . . . . . . . . 115
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T J = T C = T A
NOTE:
1. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
Electrical Specifications
V DD = V IN = V EN = 3.3V, C 1 = C 2 = 10μF, L = 1.8μH, V O = 1.8V (as shown in Typical Application Diagram),
unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
DC CHARACTERISTICS
V FB
Feedback Input Voltage
PWM Mode
790
800
810
mV
I FB
Feedback Input Current
100
nA
V IN , V DD
Input Voltage
2.5
5.5
V
V IN,OFF
V IN,ON
Minimum Voltage for Shutdown
Maximum Voltage for Startup
V IN falling
V IN rising
2
2.2
2.2
2.4
V
V
I S
Input Supply Quiescent Current
Active - PFM Mode
Active - PWM Mode
V SYNC = 0V
V SYNC = 3.3V
120
6.5
145
7.5
μA
mA
I DD
R DS(ON)-PMOS
Supply Current
PMOS FET Resistance
PWM, V IN = V DD = 5V
EN = 0, V IN = V DD = 5V
V DD = 5V, wafer test only
400
0.1
70
500
1
100
μA
μA
m Ω
R DS(ON)-NMOS NMOS FET Resistance
I LMAX
Current Limit
V DD = 5V, wafer test only
45
1.2
75
m Ω
A
T OT,OFF
T OT,ON
Over-temperature Threshold
Over-temperature Hysteresis
T rising
T falling
145
130
°C
°C
I EN , I SYNC
EN, SYNC Current
V EN , V RSI = 0V and 3.3V
-1
1
μA
V EN1 , V SYNC1
V EN2 , V SYNC2
V PG
EN, SYNC Rising Threshold
EN, SYNC Falling Threshold
Minimum V FB for PG, WRT Targeted
V FB Value
V DD = 3.3V
V DD = 3.3V
V FB rising
V FB falling
0.8
86
2.4
95
V
V
%
%
V OLPG
PG Voltage Drop
I SINK = 3.3mA
35
70
mV
AC CHARACTERISTICS
F PWM
t SYNC
t SS
PWM Switching Frequency
Minimum SYNC Pulse Width
Soft-start Time
Guaranteed by design
1.25
25
1.4
650
1.6
MHz
ns
μs
2
FN7434.6
July 12, 2006
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