参数资料
型号: EL7641ILTZ-T7
厂商: Intersil
文件页数: 17/19页
文件大小: 0K
描述: IC BOOST REG DC/DC TFT-LCD 32QFN
标准包装: 1,000
应用: 转换器,TFT,LCD
输入电压: 2.6 V ~ 5.5 V
输出数: 1
输出电压: 5.5 V ~ 20 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 32-WFQFN 裸露焊盘
供应商设备封装: 32-TQFN-EP(5x5)
包装: 带卷 (TR)
EL7640, EL7641, EL7642
? V V g
( R i || R L ) ? C L
? t
V DRN = ------------------------------------------------------------- 8
supplies. A high quality layout/design of the PCB, in respect
of grounding quality and decoupling is necessary to avoid
falsely triggering the fault detection scheme – especially
during start-up. The user is directed to the layout guidelines
and component selection sections to avoid problems during
initial evaluation and prototype PCB generation.
V ON -Slice Circuit
The V ON -slice Circuit functions as a three way multiplexer,
switching the voltage on COM between ground, DRN and
SRC, under control of the start-up sequence and the CTL pin.
During the start-up sequence, COM is held at ground via an
NDMOS FET, with ~1k impedance. Once the start-up
sequence has completed, CTL is enabled and acts as a
multiplexer control such that if CTL is low, COM connects to
DRN through a 5 ? internal MOSFET, and if CTL is high,
COM connects to SRC via a 30 ? MOSFET.
The slew rate of start-up of the switch control circuit is mainly
restricted by the load capacitance at COM pin as in the
following equation:
-------- = ------------------------------------
Where V g is the supply voltage applied to the switch control
circuit, R i is the resistance between COM and DRN or SRC
including the internal MOSFET r DS(ON) , the trace resistance
and the resistor inserted, R L is the load resistance of the
switch control circuit, and C L is the load capacitance of the
switch control circuit.
In the Typical Application Circuit, R 8 , R 9 and C 8 give the
bias to DRN based on the following equation:
V ON ? R 9 + A VDD ? R
R 8 + R 9
and R 10 can be adjusted to adjust the slew rate.
Op Amps
The EL7640, EL7641 and EL7642 have 1, 3 and 5 amplifiers
respectively. The op amps are typically used to drive the
TFT-LCD backplane (V COM ) or the gamma-correction
divider string. They feature rail-to-rail input and output
capability, they are unity gain stable, and have low power
consumption (typical 600 μ A per amplifier). The EL7640,
EL7641 and EL7642 have a –3dB bandwidth of 12MHz while
maintaining a 10V/ μ s slew rate.
Short Circuit Current Limit
The EL7640, EL7641 and EL7642 will limit the short circuit
current to ±180mA if the output is directly shorted to the
positive or the negative supply. If an output is shorted for a
long time, the junction temperature will trigger the Over
Temperature Protection limit and hence the part will shut
down.
17
Driving Capacitive Loads
EL7640, EL7641 and EL7642 can drive a wide range of
capacitive loads. As load capacitance increases, however,
the –3dB bandwidth of the device will decrease and the
peaking will increase. The amplifiers drive 10pF loads in
parallel with 10k ? with just 1.5dB of peaking, and 100pF
with 6.4dB of peaking. If less peaking is desired in these
applications, a small series resistor (usually between 5 ? and
50 ? ) can be placed in series with the output. However, this
will obviously reduce the gain. Another method of reducing
peaking is to add a “snubber” circuit at the output. A snubber
is a shunt load consisting of a resistor in series with a
capacitor. Values of 150 ? and 10nF are typical. The
advantage of a snubber is that it does not draw any DC load
current and reduce the gain.
Over-Temperature Protection
An internal temperature sensor continuously monitors the
die temperature. In the event that the die temperature
exceeds the thermal trip point, the device will be latched off
until either the input supply voltage or enable is cycled.
Layout Recommendation
The device’s performance including efficiency, output noise,
transient response and control loop stability is dramatically
affected by the PCB layout. PCB layout is critical, especially
at high switching frequency.
There are some general guidelines for layout:
1. Place the external power components (the input
capacitors, output capacitors, boost inductor and output
diodes, etc.) in close proximity to the device. Traces to
these components should be kept as short and wide as
possible to minimize parasitic inductance and resistance.
2. Place V REF and V DD bypass capacitors close to the pins.
3. Reduce the loop with large AC amplitudes and fast slew
rate.
4. The feedback network should sense the output voltage
directly from the point of load, and be as far away from LX
node as possible.
5. The power ground (PGND) and signal ground (SGND)
pins should be connected at only one point.
6. The exposed die plate, on the underneath of the
package, should be soldered to an equivalent area of
metal on the PCB. This contact area should have multiple
via connections to the back of the PCB as well as
connections to intermediate PCB layers, if available, to
maximize thermal dissipation away from the IC.
7. To minimize the thermal resistance of the package when
soldered to a multi-layer PCB, the amount of copper track
and ground plane area connected to the exposed die
plate should be maximized and spread out as far as
possible from the IC. The bottom and top PCB areas
especially should be maximized to allow thermal
dissipation to the surrounding air.
FN7415.2
February 22, 2006
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