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参数资料
| 型号： | EMB9N |
| 英文描述： | Single-Event Hardened, Single Supply, Quad Operational Amplifier; Temperature Range: -55°C to 125°C; Package: 14-FlatPack |
| 中文描述： | 晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 67K |
| 代理商： | EMB9N |
EMB9 / UMB9N / IMB9A
Transistors
General purpose
(dual digital transistors)
EMB9 / UMB9N / IMB9A
!
Features
1) Two DTA144Ys in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr1 and
DTr2.
!
Equivalent circuit
EMB9 / UMB9N
IMB9A
DTr2
DTr1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
(6)
(4)
(5)
(6)
R1
R2
R1
DTr2
DTr1
R1
R2
R1
R2=47k
R1=10k
R2=47k
R1=10k
!
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
Limits
Unit
VCC
50
V
40
V
VIN
6
IO
70
mA
IC (Max.)
100
Tj
150
C
Tstg
55+150
C
Pd
EMB9, UMB9N
150 (TOTAL)
mW
IMB9A
300 (TOTAL)
1
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
!
External dimensions (Units : mm)
ROHM : EMT6
EMB9
ROHM : UMT6
EIAJ : SC-88
UMB9N
Abbreviated symbol : B9
ROHM : SMT6
EIAJ : SC-74
IMB9A
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
1.0
1.6
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