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参数资料
型号： EMI4182MTTAG
厂商： ON Semiconductor
文件页数： 2/10页
文件大小： 0K
描述： IC FILTER COMMON MODE ESD 10WDFN
标准包装： 1
滤波器类型： 数据，信号线
线路数： 4
电流： 100mA
DC 电阻(DCR)： 8 欧姆
安装类型： 表面贴装
尺寸/尺寸： 0.098" L x 0.079" W（2.50mm x 2.00mm）
高度（最大）： 0.031"（0.80mm）
封装/外壳： 10-WDFN
工作温度： -40°C ~ 85°C
包装： 标准包装
其它名称： EMI4182MTTAGOSDKR
EMI4182
PIN FUNCTION DESCRIPTION
Pin Name
In_1+
In_1 ?
Out_1+
Out_1 ?
In_2+
In_2 ?
Out_2+
Out_2 ?
V N
Pin No.
1
2
10
9
4
5
7
6
3, 8
Type
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
Description
CMF Channel 1+ to Connector (External)
CMF Channel 1 ? to Connector (External)
CMF Channel 1+ to ASIC (Internal)
CMF Channel 1 ? to ASIC (Internal)
CMF Channel 2+ to Connector (External)
CMF Channel 2 ? to Connector (External)
CMF Channel 2+ to ASIC (Internal)
CMF Channel 2 ? to ASIC (Internal)
Ground
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Parameter
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes
(1/8” from Case for 10 seconds)
DC Current per Line
Symbol
T OP
T STG
T L
I LINE
Value
? 40 to +85
? 65 to +150
260
100
Unit
° C
° C
° C
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Symbol
I LEAK
Parameter
Channel Leakage Current
Test Conditions
T A = 25 ° C, V IN = 5 V, GND = 0 V
Min
Typ
Max
1.0
Unit
m A
V F
C IN
R CH
f 3dB
F atten
V ESD
V CL
R DYN
V RWM
V BR
Channel Negative Voltage
Channel Input Capacitance to Ground
(Pins 1, 2, 4, 5 to Pins 3, 8)
Channel Resistance
(Pins 1 ? 10, 2 ? 9, 4 ? 7 and 5 ? 6)
Differential Mode Cut ? off Frequency
Common Mode Stop Band Attenuation
In ? system ESD Withstand Voltage
a) Contact discharge per IEC 61000 ? 4 ? 2
standard, Level 4 (External Pins)
b) Contact discharge per IEC 61000 ? 4 ? 2
standard, Level 1 (Internal Pins)
TLP Clamping Voltage
(See Figure 12)
Dynamic Resistance
Positive Transients
Negative Transients
Reverse Working Voltage
Breakdown Voltage
T A = 25 ° C, I F = 10 mA
T A = 25 ° C, At 1 MHz, GND = 0 V,
V IN = 1.65 V
50 W Source and Load Termination
@ 800 MHz
(Notes 1 and 2)
Forward I PP = 8 A
Forward I PP = 16 A
Forward I PP = ? 8 A
Forward I PP = ? 16 A
T A = 25 ° C, I PP = 1 A, t P = 8/20 m s
Any I/O pin to Ground;
Notes 1 and 3
(Note 3)
I T = 1 mA; (Note 4)
0.1
± 15
± 2
5.6
0.8
8.0
2.0
30
12
18
? 6
? 12
1.36
0.6
1.5
1.3
5.0
9.0
V
pF
W
GHz
dB
kV
V
V
V
V
V
V
1. Standard IEC61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330, GND grounded.
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than the DC
or continuous peak operating voltage level.
4. V BR is measured at pulse test current I T .
http://onsemi.com
2
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