参数资料
型号: EMI4183MTTAG
厂商: ON Semiconductor
文件页数: 3/10页
文件大小: 0K
描述: IC FILTER COMMON MODE ESD 16WDFN
标准包装: 3,000
滤波器类型: 数据,信号线
线路数: 6
电流: 100mA
DC 电阻(DCR): 8 欧姆
安装类型: 表面贴装
尺寸/尺寸: 0.098" L x 0.079" W(2.50mm x 2.00mm)
高度(最大): 0.031"(0.80mm)
封装/外壳: 16-WDFN
工作温度: -40°C ~ 85°C
包装: 带卷 (TR)
其它名称: EMI4183MTTAG-ND
EMI4183MTTAGOSTR
EMI4183
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Symbol
I LEAK
Parameter
Channel Leakage Current
Test Conditions
T A = 25 ° C, V IN = 5 V, GND = 0 V
Min
Typ
Max
1.0
Unit
m A
V F
C IN
R CH
f 3dB
F atten
V ESD
V CL
R DYN
V RWM
V BR
Channel Negative Voltage
Channel Input Capacitance to Ground
(Pins 1,2,4,5,7,8 to Pins 3,6,11,14)
Channel Resistance
(Pins 1 ? 16, 2 ? 15, 4 ? 13, 5 ? 12, 7 ? 10 & 8 ? 9)
Differential Mode Cut ? off Frequency
Common Mode Stop Band Attenuation
In ? system ESD Withstand Voltage
a) Contact discharge per IEC 61000 ? 4 ? 2
standard, Level 4 (External Pins)
b) Contact discharge per IEC 61000 ? 4 ? 2
standard, Level 1 (Internal Pins)
TLP Clamping Voltage
(See Figure 12)
Dynamic Resistance
Positive Transients
Negative Transients
Reverse Working Voltage
Breakdown Voltage
T A = 25 ° C, I F = 10 mA
T A = 25 ° C, At 1 MHz, GND = 0 V,
V IN = 1.65 V
50 W Source and Load Termination
@ 800 MHz
(Notes 1 and 2)
Forward I PP = 8 A
Forward I PP = 16 A
Forward I PP = ? 8 A
Forward I PP = ? 16 A
T A = 25 ° C, I PP = 1 A, t P = 8/20 m s
Any I/O pin to Ground;
Notes 1 and 3
(Note 3)
I T = 1 mA; (Note 4)
0.1
± 15
± 2
5.6
0.8
8.0
2.0
30
12
18
? 6
? 12
1.36
0.6
1.5
1.3
5.0
9.0
V
pF
W
GHz
dB
kV
V
V
V
V
V
V
1. Standard IEC61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330, GND grounded.
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than the DC
or continuous peak operating voltage level.
4. V BR is measured at pulse test current I T .
http://onsemi.com
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