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参数资料
| 型号： | EMI4192MTTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC COMMON MODE FILTER ESD 10WDFN |
| 标准包装： | 3,000 |
| 滤波器类型： | 数据，信号线 |
| 线路数： | 4 |
| 电流： | 100mA |
| DC 电阻(DCR)： | 最大 5 欧姆 |
| 阻抗： | 32 欧姆 |
| 安装类型： | 表面贴装 |
| 尺寸/尺寸： | 0.098" L x 0.079" W（2.50mm x 2.00mm） |
| 高度（最大）： | 0.031"（0.80mm） |
| 封装/外壳： | 10-WDFN |
| 工作温度： | -40°C ~ 85°C |
| 包装： | 带卷 (TR) |
EMI4192
PIN FUNCTION DESCRIPTION
Pin Name
In_1+
In_1 ?
Out_1+
Out_1 ?
In_2+
In_2 ?
Out_2+
Out_2 ?
V N
Pin No.
1
2
10
9
4
5
7
6
3, 8
Type
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
CMF Channel 1+ to Connector
CMF Channel 1 ? to Connector
CMF Channel 1+ to ASIC
CMF Channel 1 ? to ASIC
CMF Channel 2+ to Connector
CMF Channel 2 ? to Connector
CMF Channel 2+ to ASIC
CMF Channel 2 ? to ASIC
Ground
Description
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Parameter
Operating Temperature Range
Storage Temperature Range
ESD Discharge IEC61000 ? 4 ? 2 Contact Discharge
Maximum Lead Temperature for Soldering Purposes
(1/8” from Case for 10 seconds)
DC Current per Line
Symbol
T OP
T STG
V PP
T L
I LINE
Value
? 40 to +85
? 65 to +150
± 15
260
100
Unit
° C
° C
kV
° C
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Symbol
I LEAK
Parameter
Channel Leakage Current
Test Conditions
T A = 25 ° C, V IN = 5 V, GND = 0 V
Min
Typ
Max
1.0
Unit
m A
V F
C IN
R CH
f 3dB
F atten
Z C
V ESD
V CL
R DYN
V RWM
V BR
Channel Negative Voltage
Channel Input Capacitance to Ground
(Pins 1, 2, 4, 5 to Pins 3, 8)
Channel Resistance
(Pins 1 ? 10, 2 ? 9, 4 ? 7 and 5 ? 6)
Differential Mode Cut ? off Frequency
Common Mode Stop Band Attenuation
Common Mode Impedance
ESD Protection ? Peak Discharge
Voltage at any channel input, in system:
Contact discharge per
IEC61000 ? 4 ? 2 standard
TLP Clamping Voltage
(See Figure 9)
Dynamic Resistance
Positive Transients
Negative Transients
Reverse Working Voltage
Breakdown Voltage
T A = 25 ° C, I F = 10 mA
T A = 25 ° C, At 1 MHz, GND = 0 V,
V IN = 1.65 V
50 W Source and Load Termination
@ 900 MHz
@ 100 MHz
T A = 25 ° C
(Notes 1 and 2)
Pins 1, 2, 4, 5
Forward I PP = 8 A
Forward I PP = 16 A
Forward I PP = ? 8 A
Forward I PP = ? 16 A
T A = 25 ° C, I PP = 1 A, t P = 8/20 m s
Any I/O pin to Ground;
Notes 1 and 3
(Note 3)
I T = 1 mA; (Note 4)
0.1
4.0
± 15
5.6
0.8
3.5
16
32
12
18
? 6
? 12
1.36
0.6
1.5
1.3
5.0
5.0
9.0
V
pF
W
GHz
dB
W
kV
V
V
V
V
V
V
1. Standard IEC61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330, GND grounded.
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than the DC
or continuous peak operating voltage level.
4. V BR is measured at pulse test current I T .
http://onsemi.com
2
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