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参数资料
| 型号： | EMZ8T2R |
| 英文描述： | ESD Protected to ±15kV, 5V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-PDIP |
| 中文描述： | 晶体管 |
| 文件页数： | 2/2页 |
| 文件大小： | 53K |
| 代理商： | EMZ8T2R |
EMZ8 / UMZ8N
Transistors
!
Electrical characteristics (Ta=25
°C)
Tr1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVEBO
ICBO
IEBO
VCE(sat)
hFE
BVCEO
12
6
270
0.1
0.1
0.25
680
V
A
V
IC =
1mA
BVCBO
15
VIC =
10A
IE =
10A
VCB =
15V
VEB =
6V
IC/IB =
200mA/10mA
VCE =
2V , IC = 10mA
fT
Cob
260
6.5
MHz
pF
VCE =
2V , IE = 10mA , f = 100MHz
VCB =
10V , IE = 0A , f = 1MHz
Tr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVEBO
ICBO
IEBO
VCE(sat)
hFE
BVCEO
50
7
120
0.1
0.4
560
V
A
V
IC = 1mA
BVCBO
60
VIC = 50
A
IE = 50
A
VCB = 60V
VEB = 7V
IC/IB = 50mA/5mA
VCE = 6V , IC = 1mA
fT
Cob
180
2
3.5
MHz
pF
VCE = 12V , IE =
2mA , f = 100MHz
VCB = 12V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
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