参数资料
型号: EN29LV160B-90BP
厂商: Eon Silicon Solution Inc.
英文描述: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 16兆位(2048K × 8位/ 1024K x 16位)闪存引导扇区闪存,CMOS 3.0伏,只
文件页数: 1/45页
文件大小: 438K
代理商: EN29LV160B-90BP
This Data Sheet may be revised by subsequent versions
2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
1
EN29LV160
Rev. A, Issue Date: 2004/03/30
0.
FEATURES
3.0V, single power supply operation
- Minimizes system level power requirements
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- 1
A typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte,
and
thirty-one 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword
and thirty-one 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
High performance program/erase speed
- Byte program time: 8s typical
- Sector erase time: 500ms typical
- Chip erase time: 17.5s typical
JEDEC Standard program and erase
commands
JEDEC standard DATA polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
0.23 m triple-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 2.5V
>100K program/erase endurance cycle
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
Commercial Temperature Range
GENERAL DESCRIPTION
The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8s.
The EN29LV160 features 3.0V voltage read and write operation, with access times as fast as 70ns
to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
EN29LV160 ******PRELIMINARY DRAFT******
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
相关PDF资料
PDF描述
EN29LV160B-90B 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90TIP 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90TI 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90TP 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90T 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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