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| 型号： | EN29LV320B-90BIP |
| 厂商： | Eon Silicon Solution Inc. |
| 英文描述： | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 32兆位（4096K × 8位/ 2048K x 16位）闪存引导扇区闪存，CMOS 3.0伏，只 |
| 文件页数： | 26/49页 |
| 文件大小： | 437K |
| 代理商： | EN29LV320B-90BIP |
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This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
32
EN29LV320
Rev. E, Issue Date: 2006/05/16
DC Characteristics
Table 11. DC Characteristics
(T
B
aB = 0°C to 70°C or - 40°C to 85°C; VBCCB = 2.7-3.6V)
Notes:
1.
BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
they draw power if not at full CMOS supply voltages.
2.
Maximum I
B
CCB specifications are tested with Vcc = Vcc max.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
B
LIB
Input Leakage Current
0V
≤ V
B
INB ≤ Vcc
±5
A
I
B
LOB
Output Leakage Current
0V
≤ V
B
OUTB ≤ Vcc
±5
A
Supply Current (read) CMOS Byte
9
16
mA
I
B
CC1B
(read) CMOS Word
CE# = V
B
IL B; OE# = VBIH ;
B
f = 5MHZ
9
16
mA
I
B
CC2B
Supply Current (Program or Erase)
CE# = V
B
ILB, OE# = VBIH B ,
WE# = V
B
ILB
20
30
mA
I
B
CC3B
Supply Current (Standby - CMOS)
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
1
5.0
A
I
B
CC4B
Reset Current
RESET# = Vss ± 0.3V
1
5.0
mA
I
B
CC5B
Automatic Sleep Mode
V
B
IHB = Vcc ± 0.3V
V
B
ILB = Vss ± 0.3V
1
5.0
uA
V
B
ILB
Input Low Voltage
-0.5
0.8
V
B
IHB
Input High Voltage
0.7 x
Vcc
Vcc ±
0.3
V
B
HHB
#WP/ACC Voltage (Write Protect /
Program Acceleration)
10.5
11.5
V
B
IDB
Voltage for Autoselect or
Temporary Sector Unprotect
10.5
11.5
V
B
OLB
Output Low Voltage
I
B
OLB = 4.0 mA
0.45
V
Output High Voltage TTL
I
B
OHB = -2.0 mA
0.85 x
Vcc
V
B
OHB
Output High Voltage CMOS
I
B
OH B= -100 A,
Vcc -
0.4V
V
B
LKOB
Supply voltage (Erase and
Program lock-out)
2.3
2.5
V
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