参数资料
型号: EN29LV640T-90B
厂商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 64兆位(8米× 8位/分x 16位)闪存引导扇区闪存,CMOS 3.0伏,只
文件页数: 10/53页
文件大小: 495K
代理商: EN29LV640T-90B
This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
18
EN29LV640T/B
Rev. B, Issue Date: 2007/05/16
SG28
SA 90-SA 87
10100XXXXX
64 Kbytes x 4
SG27
SA 86-SA 83
10011XXXXX
64 Kbytes x 4
SG26
SA 82-SA 79
10010XXXXX
64 Kbytes x 4
SG25
SA 78-SA 75
10001XXXXX
64 Kbytes x 4
SG24
SA 74-SA 71
10000XXXXX
64 Kbytes x 3
SG23
SA 70-SA 67
01111XXXXX
64 Kbytes x 4
SG22
SA 66-SA 63
01110XXXXX
64 Kbytes x 4
SG21
SA 62-SA 59
01101XXXXX
64 Kbytes x 4
SG20
SA 58-SA 55
01100XXXXX
64 Kbytes x 4
SG19
SA 54-SA 51
01011XXXXX
64 Kbytes x 4
SG18
SA 50-SA 47
01010XXXXX
64 Kbytes x 4
SG17
SA 46-SA 43
01001XXXXX
64 Kbytes x 4
SG16
SA 42-SA 39
01000XXXXX
64 Kbytes x 4
SG15
SA 38-SA 35
00111XXXXX
64 Kbytes x 4
SG14
SA 34-SA 31
00110XXXXX
64 Kbytes x 4
SG13
SA 30-SA 27
00101XXXXX
64 Kbytes x 4
SG12
SA 26-SA 23
00100XXXXX
64 Kbytes x 4
SG11
SA 22-SA 19
00011XXXXX
64 Kbytes x 4
SG10
SA 18-SA 15
00010XXXXX
64 Kbytes x 4
SG 9
SA 14-SA 11
00001XXXXX
64 Kbytes x 4
SG 8
SA 10-SA
8
0000011XXX
0000010XXX
0000001XXX
64 Kbytes x 3
SG 7
SA
7
0000000111
8 Kbytes
SG 6
SA
6
0000000110
8 Kbytes
SG 5
SA
5
0000000101
8 Kbytes
SG 4
SA
4
0000000100
8 Kbytes
SG 3
SA
3
0000000011
8 Kbytes
SG 2
SA
2
0000000010
8 Kbytes
SG 1
SA
1
0000000001
8 Kbytes
SG 0
SA
0
0000000000
8 Kbytes
Write Protect / Accelerated Program (WP# / ACC)
The WP#/ACC pin provides two functions. The Write Protect (WP#) function provides a hardware method
of protecting the outermost two 8K-byte Boot Sector. The ACC function allows faster manufacturing
throughput at the factory, using an external high voltage.
When WP#/ACC is Low, the device protects the outermost tw 8K-byte Boot Sector; no matter the sectors
are protected or unprotected using the method described in “Sector/Sector Group Protection & Chip
Unprotection”, Program and Erase operations in these sectors are ignored.
When WP#/ACC is High, the device reverts to the previous protection status of the outermost two 8K-byte
boot sector. Program and Erase operations can now modify the data in the two outermost 8K-byte Boot
Sector unless the sector is protected using Sector Protection.
When WP#/ACC is raised to VHH the memory automatically enters the Unlock Bypass mode(please refer
to “Command Definitions”), temporarily unprotects every protected sectors, and reduces the time required
for program operation. The system would use a two-cycle program command sequence as required by
the Unlock Bypass mode. When WP#/ACC returns to VIH or VIL, normal operation resumes. The
transitions from VIH or VIL to VHH and from VHH to VIH or VIL must be slower than tBVHHB, see Figure 11.
Note that the WP#/ACC pin must not be left floating or unconnected. In addition, WP#/ACC pin must not
be at VHH for operations other than accelerated programming. It could cause the device to be damaged.
Never raise this pin to VHH from any mode except Read mode, otherwise the memory may be left in an
indeterminate state.
相关PDF资料
PDF描述
EN29LV640T-90TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90T 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TB-70BCP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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