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| 型号： | EN29LV640T-90BP |
| 厂商： | Eon Silicon Solution Inc. |
| 英文描述： | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 64兆位（8米× 8位/分x 16位）闪存引导扇区闪存，CMOS 3.0伏，只 |
| 文件页数： | 17/53页 |
| 文件大小： | 495K |
| 代理商： | EN29LV640T-90BP |
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This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
24
EN29LV640T/B
Rev. B, Issue Date: 2007/05/16
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program
or Embedded Erase algorithm.
Following a Sector Erase Suspend command, Sector Erase Suspend mode is entered. The system
can read array data using the standard read timings from sectors other than the one which is being
erase-suspended. If the system reads at an address within erase-suspended sectors, the device
outputs status data. After completing a programming operation in the Sector Erase Suspend mode,
the system may once again read array data with the same exception.
The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high
during an active program or erase operation or while in the autoselect mode. See next section for
details on Reset.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are
don’t-care for this command.
The reset command may be written between the cycle sequences in an erase command sequence
before erasing begins. This resets the device to reading array data. Once erasure begins, however,
the device ignores reset commands until the operation is complete. The reset command may be
written between the sequence cycles in a program command sequence before programming begins.
This resets the device to reading array data (also applies to programming in Sector Erase Suspend
mode). Once programming begins, however, the device ignores reset commands until the operation
is complete.
The reset command may be written between the cycle sequences in an autoselect command
sequence. Once in the autoselect mode, the reset command must be written to return to reading
array data.
If DQ5 goes high during a program or erase operation, writing the reset command returns the device
to reading array data (also applies in Sector Erase Suspend mode).
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices
ID codes, and determine whether or not a sector (group) is protected. The Command Definitions
table shows the address and data requirements. This is an alternative to the method that requires
V
B
IDB on address bit A9 and is intended for commercial programmers.
Two unlock cycles followed by the autoselect command initiate the autoselect command sequence.
Autoselect mode is then entered and the system may read at addresses shown in Table 9 any
number of times, without needing another command sequence.
The system
must write the reset command to exit the autoselect mode and return to reading array
data.
Word / Byte Programming Command
The device can be programmed by byte or by word, depending on the state of the BYTE# Pin.
Programming the EN29LV640T/B is performed by using a four-bus-cycle operation (two unlock write
cycles followed by the Program Setup command and Program Data Write cycle). When the program
command is executed, no additional CPU controls or timings are necessary. An internal timer
相关PDF资料 |
PDF描述 |
|---|---|
| EN29LV640T-90B | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90TIP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90TI | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90TP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90T | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EN29LV800AB-70TC | 制造商:Eon Silicon Solution Inc 功能描述: |
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全称:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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