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参数资料
| 型号： | ENGTDDSY2x3FCT1G |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Dual-Stage, Differential Lines Filter |
| 中文描述： | 双级，差分线过滤器 |
| 文件页数： | 5/10页 |
| 文件大小： | 86K |
| 代理商： | ENGTDDSY2X3FCT1G |
NMF3000, NMF3010
http://onsemi.com
5
MAXIMUM RATINGS
Rating
Symbol
Value
Units
Operating Ambient Temperature Range
T
A
40 to 85
°
C
Moisture Sensitivity
MSL
Level 1
Storage Temperature Range
T
stg
55 to 150
°
C
Supply Voltage
V
CC
0 to 11
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(V
CC
= 0 V to 10 V, T
A
= 40
°
C to 85
°
C, All Typical Values Measured at 25
°
C)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
Supply Voltage
First stage only
V
CC
0
10
V
Attenuation
@ 800 MHz, 50 Environment
52
95
dB
Attenuation
@ 1.9 GHz, 50 Environment
52
70
dB
B2B Diode Breakdown Voltage
IR = 1.0 mA, Pin to PGND, AGND to PGND
B2B BV
±
12
V
Standoff Voltage
VRM
10
V
Leakage Current
V = VRM, for each stage
IRM
500
nA
Power Dissipation
100
mW
NMF3000FCT1G DC Series
Resistance
Input to output on first stage
RI/O
997
1050
1103
NMF3010FCT1G DC Series
Resistance
Input to output on second stage
RI/O
950
1000
1050
Input Capacitance per Line
f = 1.0 MHz, for each stage when capacitor
has 2.0 V across its terminals.
C
LINE
900
1000
1100
pF
Bias Resistance per Line
First Stage Only
R
BIAS1
950
1000
1050
Crosstalk
50 Source and Load
CT
25
dB
Noise
Idlechannel or Selfnoise of the Network
6.0
nV/
√
Hz
Distortion
Anywhere in the Bandwidth 20 Hz to 20 kHz
0.01
%
1. Specifications apply to devices as a pair, as shown in the system diagram, unless otherwise noted as ‘for each stage’.
ESD CHARACTERISTICS
Pin
Level
Type
Min
Units
NMF3000FCT1G: A2, C2, A3, C3 to PGND
NMF3010FCT1G: B2, B3, A3 to PGND
4+
IEC 6100042
Contact
15
kV
NMF3000FCT1G: A2, C2, A3, C3 to PGND
NMF3010FCT1G: B2, B3, A3 to PGND
4
IEC 6100042
Air
15
kV
NMF3000FCT1G: All Pins Pairwise
NMF3010FCT1G: All Pins Pairwise
1
IEC 6100042
Contact
2.0
kV
NMF3000FCT1G: All Pins Pairwise
NMF3010FCT1G: All Pins Pairwise
1
IEC 6100042
Air
2.0
kV
COMPONENT MATCHING
Component
Description
Max
Unit
Resistors
Amount of Relative Variation between Symmetrical Resistors / Capaci-
tors on the same Device
2.0
%
Capacitors
2.0
%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ENGTDDSY3X3FCT1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual-Stage, Differential Lines Filter |
| ENH | 制造商:OSRAM 功能描述:250 WATT, TUNGSTEN HALOGEN, LOW TO MEDIUM VOLTAGE WITH REFLECTOR |
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