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参数资料
| 型号： | EPB025A |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Noise High Gain Heterojunction FET |
| 中文描述： | 低噪声高增益异质结场效应管 |
| 文件页数： | 1/2页 |
| 文件大小： | 32K |
| 代理商： | EPB025A |
Excelics
EPB025A
DATA SHEET
Low Noise High Gain Heterojunction FET
TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED
GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
SUPER LOW NOISE, HIGH GAIN AND HIGH
RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
NF
Noise Figure f = 12GHz
Vds=2V, Ids=15mA
Associated Gain f = 12GHz
Vds=2V, Ids=15mA
Output Power at 1dB Compression
Vds=3V, Ids=25mA
Gain at 1dB Compression
Vds=3V, Ids=25mA
0.80
1.0
dB
Ga
10.0
11.0
dB
P
1dB
f=12GHz
f=18GHz
f=12GHz
f=18GHz
15.0
15.0
13.0
11.0
dBm
G
1dB
dB
Idss
Saturated Drain Current Vds=2V, Vgs=0V
20
50
80
mA
Gm
Transconductance Vds=2V, Vgs=0V
50
80
mS
Vp
Pinch-off Voltage Vds=2V, Ids=1.0mA
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=10uA
-3
-5
V
BVgs
Source Breakdown Voltage Igs=10uA
-3
-5
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
155
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
PARAMETERS
ABSOLUTE
1
5V
-3V
Idss
2mA
12dBm
175
o
C
-65/175
o
C
880mW
CONTINUOUS
2
3V
-3V
Idss
0.3mA
@ 1dB Compression
150
o
C
-65/150
o
C
730mW
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
50
48
50
40
59
78
104
420
260
90
D
D
G
G
S
S
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相关代理商/技术参数 |
参数描述 |
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| EPB025A-70 | 制造商:EXCELICS 制造商全称:EXCELICS 功能描述:Low Noise High Gain Heterojunction FET |
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