参数资料
| 型号： | SD12CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER 350W 12V ESD SOD323 |
| 产品目录绘图： | SD Series SOD-323 Top SD12CT1 Schematic |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.3V |
| 功率（瓦特）： | 350W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 标准包装 |
| 产品目录页面： | 2387 (CN2011-ZH PDF) |
| 其它名称： | SD12CT1GOSDKR |
SD12CT1
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20 m s @ T L ≤ 25 ° C
IEC 61000?4?2 (ESD)
IEC 61000?4?4 (EFT)
Total Device Dissipation FR?5 Board,
(Note 1) @ T A = 25 ° C
Derate above 25 ° C
Thermal Resistance from Junction?to?Ambient
Junction and Storage Temperature Range
Lead Solder Temperature ? Maximum (10 Second Duration)
Air
Contact
Symbol
P pk
P D
R q JA
T J , T stg
T L
Value
350
± 30
± 30
40
200
1.5
635
?65 to +150
260
Unit
W
kV
A
mW
mW/ ° C
° C/W
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum Solder Footprint.
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol
Parameter
I PP
I
I PP
V C
V RWM
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I T
V C V BR V RWM I R
I R V
I T
RWM V BR V C
V
I R
V BR
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
I T
Q V BR
Test Current
Maximum Temperature Variation of V BR
I PP
Bi?Directional TVS
ELECTRICAL CHARACTERISTICS (T J = 25 ° C, unless otherwise specified)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Additional Clamping Voltage
Maximum Peak Pulse Current
Capacitance
(Note 2)
I T = 1 mA, (Note 3)
V RWM = 12 V
I PP = 5 A, (8 x 20 m sec Waveform)
I PP = 15 A, (8 x 20 m sec Waveform)
8 x 20 m sec Waveform
V R = 0 V, f = 1 MHz
V RWM
V BR
I R
V C
I PP
C j
13.3
64
12
1.0
19
24
15
V
V
m A
V
A
pF
V R = 12 V, f = 1 MHz
36
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
http://onsemi.com
2
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