参数资料
| 型号： | SD12CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER 350W 12V ESD SOD323 |
| 产品目录绘图： | SD Series SOD-323 Top SD12CT1 Schematic |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.3V |
| 功率（瓦特）： | 350W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 标准包装 |
| 产品目录页面： | 2387 (CN2011-ZH PDF) |
| 其它名称： | SD12CT1GOSDKR |
SD12CT1
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20 m s @ T L ≤ 25 ° C
IEC 61000?4?2 (ESD)
IEC 61000?4?4 (EFT)
Total Device Dissipation FR?5 Board,
(Note 1) @ T A = 25 ° C
Derate above 25 ° C
Thermal Resistance from Junction?to?Ambient
Junction and Storage Temperature Range
Lead Solder Temperature ? Maximum (10 Second Duration)
Air
Contact
Symbol
P pk
P D
R q JA
T J , T stg
T L
Value
350
± 30
± 30
40
200
1.5
635
?65 to +150
260
Unit
W
kV
A
mW
mW/ ° C
° C/W
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum Solder Footprint.
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol
Parameter
I PP
I
I PP
V C
V RWM
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I T
V C V BR V RWM I R
I R V
I T
RWM V BR V C
V
I R
V BR
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
I T
Q V BR
Test Current
Maximum Temperature Variation of V BR
I PP
Bi?Directional TVS
ELECTRICAL CHARACTERISTICS (T J = 25 ° C, unless otherwise specified)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Additional Clamping Voltage
Maximum Peak Pulse Current
Capacitance
(Note 2)
I T = 1 mA, (Note 3)
V RWM = 12 V
I PP = 5 A, (8 x 20 m sec Waveform)
I PP = 15 A, (8 x 20 m sec Waveform)
8 x 20 m sec Waveform
V R = 0 V, f = 1 MHz
V RWM
V BR
I R
V C
I PP
C j
13.3
64
12
1.0
19
24
15
V
V
m A
V
A
pF
V R = 12 V, f = 1 MHz
36
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SD12CT1G-CUT TAPE | 制造商:ON 功能描述:SD12CT1 Series 7.3 V 350 W Transient Voltage Suppressor Diode - SOD-323 |
| SD12CTC | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
| SD12CTG | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
| SD12H0B | 功能描述:DIP 开关/ SIP 开关 Switch Dip Flush Tape Seal 12Pos RoHS:否 制造商:Omron Electronics 位置数量:10 开关类型:DIP 执行器:Rotary 端子节距:2.54 mm 触点形式: 端接类型:Solder Pin 电流额定值:100 mA 电压额定值 DC: 工作温度范围: 安装:Through Hole |
| SD12H0K | 功能描述:DIP 开关/ SIP 开关 ON OFF SPST 12POS LOW PROFILE DIP SW RoHS:否 制造商:Omron Electronics 位置数量:10 开关类型:DIP 执行器:Rotary 端子节距:2.54 mm 触点形式: 端接类型:Solder Pin 电流额定值:100 mA 电压额定值 DC: 工作温度范围: 安装:Through Hole |
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