参数资料
型号: ES1B
厂商: Fairchild Semiconductor
文件页数: 1/4页
文件大小: 104K
描述: DIODE FAST 1A 100V SMA
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 920mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 15ns
电流 - 在 Vr 时反向漏电: 5µA @ 100V
电容@ Vr, F: 7pF @ 4V,1MHz
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 标准包装
其它名称: ES1BFSDKR
ES1A - ES1D
?2010 Fairchild Semiconductor Corporation
ES1A-ES1D, Rev. C1
Fast Rectifiers
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
Electrical Characteristics
TA
= 25°C unless otherwise noted
ES1A - ES1D
Features
? For surface mount applications.
?
Glass passivated junction.
?
Low profile package.
?
Easy pick and place.
? Built-in strain relief.
?
Superfast recovery times for
high efficiency.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation 1.47 W
RθJA
Thermal Resistance, Junction to Ambient* 85
°C/W
RθJL
Thermal Resistance, Junction to Lead* 35
°C/W
Symbol
Parameter
Device
Units
1A 1B 1C 1D
VF
Forward Voltage @ 1.0 A 0.92 V
trr
Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, IRR = 0.25 A
15 ns
IR
Reverse Current @ rated VR TA = 25°C
5.0
μA
100
μA
T
A = 100°C
Total Capacitance
7.0 pF
CT
V
R = 4.0 V, f = 1.0 MHz
Value
Symbol
Parameter
1A 1B 1C 1D
Units
VRRM
Maximum Repetitive Reverse Voltage 50 100 150 200 V
IF(AV)
Average Rectified Forward Current, @ T
A=120°C 1.0 A
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
30 A
Tstg
Storage Temperature Range -50 to +150
°C
TJ
Operating Junction Temperature -50 to +150
°C
*Device mounted on FR-4 PCB 0.013 mm.
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