参数资料
型号: ES1J
厂商: Fairchild Semiconductor
文件页数: 2/4页
文件大小: 153K
描述: DIODE FAST 1A 600V SMA
产品目录绘图: SOD-123; SMB; SMA; SMC
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1.7V @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 5µA @ 600V
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: SMA
包装: 标准包装
产品目录页面: 1611 (CN2011-ZH PDF)
其它名称: ES1JFSDKR
2
www.fairchildsemi.com
ES1F - ES1J Rev. A
ES1F - ES1J Fast Rectifiers
Typical Performance Characteristics
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
1
10
100
30
20
10
5.0
25
15
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Waveo
(JEDEC Method) at T =120 CL
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
10
50
0.1
FORWARD VOLTAGE. (V)
ES1A - D
ES1F - 1G
Tj=25 C0
PULSE WIDTH-300 S
1% DUTY CYCLE
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
AVERAGE FORWARD CURRENT. (A)
80 90 100 120 140 150110
130
0
0.2
0.6
0.8
1.2
1.0
0.4
LEAD TEMPERATURE. ( C)o
RESISTIVE OR
INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
0
20 40 60 80 100 120 140
10
100
1000
1
0.1
0.01
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=125 C0
Tj=85 C0
Tj=25 C0
1
0
0
10
100
14
10
6.0
4.0
2.0
12
8.0
FIG.5- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE.(pF)
REVERSE VOLTAGE. (V)
ES1
F
G
-
ES1
H
-J
Tj=25 C0
f=1.0MHz
Vsig=50mVp-p
INSTANTANEOUS REVERSE CURRENT. ( A)
ES1H - 1J
0.01
0.1
1
10
T=25 oCj
PULSE WIDTH 300uS
1% DUTY CYCLE
ES1F-1G
ES1H-1J
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相关代理商/技术参数
参数描述
ES1J F2 制造商:SKMI/Taiwan 功能描述:Diode Switching 600V 1A 2-Pin SMA T/R
ES1J R2 制造商:SKMI/Taiwan 功能描述:Diode Switching 600V 1A 2-Pin SMA T/R
ES1J 制造商:Fairchild Semiconductor Corporation 功能描述:FAST DIODE 1A 600V DO-214AC
ES1J_HF-TR 制造商:Lite-On Semiconductor Corporation 功能描述:SURFACE MOUNT SUPER FAST RECTIFIERS,REVERSE VOLTAGE 600 Volts FORWARD CURRENT - 1.0 Ampere
ES1J_R1_00001 制造商:PanJit Touch Screens 功能描述: