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参数资料
| 型号： | ES2B-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 115K |
| 描述： | RECT SUPER FAST SMD 100V 2A SMB |
| 标准包装： | 1 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 2A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 920mV @ 2A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 25ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 100V |
| 电容@ Vr, F： | 25pF @ 4V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 标准包装 |
| 其它名称： | ES2BDIDKR |
ES2A/A - ES2D/A
Document number: DS14002 Rev. 12 - 2
2 of 4
www.diodes.com
September 2010
? Diodes Incorporated
ES2A/A - ES2D/A
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol ES2A/A ES2B/A ES2C/A ES2D/A Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 4)
VRRM
VRWM
VR
50 100 150 200 V
RMS Reverse Voltage
VR(RMS)
35 70 105 140 V
Average Rectified Output Current @ TT
= 110
°CIO
2.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half Sine-Wave Superimposed on Rated Load
IFSM
50 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal (Note 5)
RθJT
20 °C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage @ IF
= 2.0A V
FM
0.92 V
Peak Reverse Current @ TA
= 25
°C
at Rated DC Blocking Voltage (Note 4) @ TA
= 125
°C
IRM
5.0
350
μA
Typical Total Capacitance (Note 6)
CT
25 pF
Reverse Recovery Time (Note 7)
trr
25 ns
Notes: 4. Short duration pulse test used
to minimize self-heating effect.
5. Unit mounted on PC board with 5.0 mm2
(0.013 mm thick) copper pads as heat sink.
6. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
7. Measured with IF
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 5.
025 50 75 100
0.8
1.6
2.4
125
150 175
I, AVE
R
A
G
E
F
O
R
WA
R
D
C
U
R
R
EN
T
(A)
O
T , TERMINAL TEMPERATURE ( C)T
°
Fig. 1 Forward Current Derating Curve
2.0
0.4
1.2
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics
0.01
0.1
1.0
10
0 0.4 0.8 1.2 1.6
T = 25Coj
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| ES2A-13 | RECT SUPER FAST SMD 50V 2A SMB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ES2B-13-F | 功能描述:整流器 100V 2A RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ES2BA | 制造商:Diodes Incorporated 功能描述:DIODE RECTIF S FAST 2A 100V SMA 制造商:Diodes Incorporated 功能描述:DIODE, RECTIF, S FAST, 2A, 100V, SMA 制造商:Diodes Incorporated 功能描述:DIODE, RECTIF, S FAST, 2A, 100V, SMA; Diode Type:Ultrafast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):2A; Forward Voltage VF Max:920mV; Reverse Recovery Time trr Max:25ns ;RoHS Compliant: Yes |
| ES2B-A | 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE：50 TO 400V CURRENT：2.0A |
| ES2BA F2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 100V 2A 2-Pin SMA T/R |
| ES2BA R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 100V 2A 2-Pin SMA T/R |
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