参数资料
型号: ES3J
厂商: Fairchild Semiconductor
文件页数: 1/4页
文件大小: 138K
描述: DIODE ULTRAFAST 600V 3A DO-214AB
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 1.7V @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 10µA @ 600V
电容@ Vr, F: 45pF @ 4V,1MHz
安装类型: 表面贴装
封装/外壳: DO-214AB,SMC
供应商设备封装: SMC
包装: 标准包装
产品目录页面: 1611 (CN2011-ZH PDF)
其它名称: ES3JDKR
ES3A - ES3J — F
ast Rectifiers
? 2012 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ES3A - ES3J Rev. F2 1
April 2012
ES3A - ES3J
Fast Rectifiers
Features
? For surface mount applications.
? Glass passivated junction.
? Low profile package.
? Easy pick and place.
? Built-in strain relief.
? Superfast recovery times for high efficiency.
Absolute Maximum Ratings * Ta
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics Ta
= 25°C unless otherwise noted
Symbol Parameter
Value
Units
ES3A ES3B ES3C ES3D ES3J
VRRM
Maximum Repetitive Reverse Voltage 50 100 150 200 600 V
IF(AV)
Average Rectified Forward Current,
.375” lead length @ T
a = 75°C
3.0 A
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
100 A
TJ, TSTG
Operating Junction and Storage Temperature Range -50 to +150
°C
Symbol Parameter Value Units
PD
Power Dissipation 1.66 W
RθJA
Thermal Resistance, Junction to Ambient * 47
°C/W
RθJL
Thermal Resistance, Junction to Lead * 12
°C/W
Symbol Parameter
Value
Units
ES3A ES3B ES3C ES3D ES3J
VF
Maximum Forward Voltage @ IF
= 3.0 A 0.95 1.7 V
Trr
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Max. 30 45 ns
Typ. 20 35 ns
IR
Maximum Reverse Current @ rated VR
T
a
= 25
°C
T
a
= 100
°C
10
500
μA
μA
CT
Total Capacitance VR
= 4.0 V, f = 1.0 MHz 45 pF
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
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