参数资料
型号: ESD1P0RFS H6327
厂商: Infineon Technologies
文件页数: 5/9页
文件大小: 0K
描述: DIODE RF ESD 2CH SOT363
标准包装: 3,000
电压 - 反向隔离(标准值): 70V
电极标记: 2 通道阵列 - 单向
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: PG-SOT363-6
包装: 带卷 (TR)
其它名称: SP000753518
ESD1P0RF...
1. Application example ESD1P0RFW
1 channel, anti-parallel configuration
1 protected signal line,
superimposed DC voltage up to
±V F (diode forward voltage)
3
I/O
ESD
sensitive
circuit
The protection diode should
be placed very close to the
location where the ESD or
other transients can occur to
keep loops and inductances
as small as possible.
Line capacitance to
ground = 1 pF
Pins 1 and 2 should be
connected in parallel directly
to a ground plane on the
1
2
board.
2. Application example ESD1P0RFW
1 channel, rail-to-rail configuration
+Vcc
1 protected signal line,
superimposed DC voltage up to
+Vcc (voltage supply)
I/O
ESD
sensitive
circuit
Pin 2 should be connected
to the positive supply
voltage and pin 1 should be
connected directly to a
ground plane on the board.
Clamped input voltage at I/O
port is limited to Vcc + VF at
positive transients and 0V -
VF at negative transients
Line capacitance to
ground = 1 pF
3. Application example ESD1P0RFS
2 channels, anti-parallel configuration
2 protected signal lines,
superimposed DC voltage up to
±V F (diode forward voltage)
I/O
(VF ... diode forward voltage
drop).
4
3
Pins 1, 2 and 4, 5 should be
connected in parallel directly
to a ground plane on the
5
6
2
1
ESD
sensitive
device
board. Clamped input
voltage at I/O port is limited
to ± V CL (clamping voltage)
at positive resp. negative
transients.
I/O
Line capacitance to ground = 1 pF
5
2011-07-20
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ESD1P0RFW H6327 DIODE RF ESD 1CH SOT323
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