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参数资料
| 型号： | ESD5384NCTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD PROTECT 4CH 9-WLCSP |
| 标准包装： | 5,000 |
| 电压 - 反向隔离（标准值）： | 3V |
| 电压 - 击穿： | 6V |
| 电极标记： | 5 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 9-UFBGA，WLCSP |
| 供应商设备封装： | 9-WLCSP（1.14x1.14） |
| 包装： | 带卷 (TR) |
ESD5384
ABSOLUTE MAXIMUM RATINGS
Symbol
V PP
T op
T stg
Parameter
External pins (A1, A2, A3, B3 and C3):
ESD IEC 61000 ? 4 ? 2, level 4 – air discharge
ESD IEC 61000 ? 4 ? 2, level 4 – contact discharge
Internal pins (B1, C1):
ESD IEC 61000 ? 4 ? 2, level 1 – air discharge
ESD IEC 61000 ? 4 ? 2, level 1 – contact discharge
Operating Temperature Range
Storage Temperature Range
Value
± 15
± 8
± 2
± 2
? 30 to +85
? 55 to +150
Unit
kV
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (Note 1)
Symbol
Test Condition
Min
Typ
Max
Unit
V BR
I RM
I RM
Breakdown Voltage (I r = 1mA)
Leakage Current @ V rm (V rm = 3 V per line), excluding HPD line
Leakage Current @ V rm (V rm = 3 V per line), HPD line
6
50
20
200
32
V
nA
m A
R1, R2
R3
R4
C line
Resistance
Pull ? up Resistance
Pull ? up Resistance
V line = 0 V, V osc = 30 mV, F = 1 MHz, A2 with B1 not connected
1575
80
22
1750
100
27
14
1925
120
32
17
W
k W
k W
pF
V line = 0 V, V osc = 30 mV, F = 1 MHz, A3, B3 with C1 not connected.
V line = 0 V, V osc = 30 mV, F = 1 MHz, A2, A3, B3 with C1 and B1 grounded
1. All parameters specified at T A = 25 ° C unless otherwise noted.
TYPICAL CHARACTERISTICS
Figure 2. Crosstalk Measurements
http://onsemi.com
2
24
10
29
12
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