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参数资料
| 型号： | ESD5V5U5ULC E6327 |
| 厂商： | Infineon Technologies |
| 文件页数： | 7/16页 |
| 文件大小： | 0K |
| 描述： | DIODE TVS UNIDIR 5.5V SC74-6 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 5.5V |
| 电极标记： | 5 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | SC-74 |
| 包装： | 带卷 (TR) |
| 其它名称： | ESD5V5U5ULCE6327HTSA1 SP000868506 |
ESD5V5U5ULC
Characteristics
Table 5
ESD Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Reverse clamping
voltage 1)
V CL
–
–
9
12
–
–
V
V
I PP = 1 A, t p = 8/20 μ s,
I/O pin to GND
I PP = 3 A, t p = 8/20 μ s,
I/O pin to GND
Reverse clamping
voltage 2) [2]
V CL
–
8.9
–
V
I PP = 16 A,
t p = 100 ns,
I/O pin to GND
–
11.5
–
V
I PP = 30 A,
t p = 100 ns,
I/O pin to GND
Forward clamping
voltage 1)
V FC
–
–
1.75
2.5
–
–
V
V
I PP = 1 A, t p = 8/20 μ s,
GND pin to I/O
I PP = 3 A, t p = 8/20 μ s,
GND pin to I/O
Forward clamping
voltage 2) [2]
V FC
–
5.4
–
V
I PP = 16 A,
t p = 100 ns,
GND pin to I/O
–
9.2
–
V
I PP = 30 A,
t p = 100 ns,
GND pin to I/O
Dynamic resistance
I/O to GND 2) [2]
R DYN, I/O –
to GND
0.2
–
Ω
GND to I/O [2]
Dynamic resistance
R DYN,
GND to I/O
–
0.3
–
Ω
1) I PP according to IEC61000-4-5
2) Please refer to Application Note AN210 [2] . TLP parameter: Z 0 = 50 Ω , t p = 100ns, t r = 300ps, averaging window: t 1 = 30 ns
to t 2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistic between I PP1 = 10 A and
I PP2 = 40 A.
Final Data Sheet
7
Revision 1.2, 2013-02-07
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