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参数资料
| 型号： | ESD7104MUTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | IC TVS 4LINE ESD PROTECT 10UDFN |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 5.5V |
| 电极标记： | 4 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-UFDFN |
| 供应商设备封装： | 10-UDFN（2.5x1） |
| 包装： | 带卷 (TR) |
| 其它名称： | ESD7104MUTAG-ND ESD7104MUTAGOSTR |
ESD7104
IEC 61000 ? 4 ? 2 Spec.
Test First Peak
Voltage Current
Level (kV) (A)
Current at
30 ns (A)
Current at
60 ns (A)
I peak
100%
90%
IEC61000 ? 4 ? 2 Waveform
1
2
7.5
4
2
2
3
4
4
6
8
15
22.5
30
8
12
16
4
6
8
I @ 30 ns
I @ 60 ns
10%
t P = 0.7 ns to 1 ns
Figure 3. IEC61000 ? 4 ? 2 Spec
ESD Gun
TVS
50 W
Cable
Oscilloscope
50 W
Figure 4. Diagram of ESD Clamping Voltage Test Setup
The following is taken from Application Note
AND8308/D ? Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000 ? 4 ? 2 waveform. Since the
IEC61000 ? 4 ? 2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
100
90
80
70
60
50
40
30
20
10
t r
t P
PEAK VALUE I RSM @ 8 m s
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 m s
HALF VALUE I RSM /2 @ 20 m s
0
0
20
40
60
80
t, TIME ( m s)
Figure 5. 8 X 20 m s Pulse Waveform
http://onsemi.com
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ESD7181MUT5G | 制造商:ON Semiconductor 功能描述:18V ESD PROTECTION - Tape and Reel |
| ESD7381MUT5G | 功能描述:TVS 二极管 - 瞬态电压抑制器 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ESD7383NCTBG | 功能描述:ESD 抑制器 3 CHAN ESD PROT RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| ESD7481MUT5G | 功能描述:TVS 二极管 - 瞬态电压抑制器 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ESD7484NCTAG | 功能描述:ESD 抑制器 4 CHAN ESD PROT RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
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