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参数资料
| 型号： | ESDALC6V1W |
| 英文描述： | QUAD TRANSIL ARRAY FOR ESD PROTECTION |
| 中文描述： | 四TRANSIL ESD保护阵列 |
| 文件页数： | 4/9页 |
| 文件大小： | 145K |
| 代理商： | ESDALC6V1W |
ESDALC6V1W5
4/9
With the focus of lowering the operation levels, the problem of malfunction caused by the environment is
critical. Electrostatic discharge (ESD) is a major cause of failure in electronic systems.
As a transient voltage suppressor, ESDALC6V1W5 is an ideal choice for ESD protection by suppressing
ESD events. It is capable of clamping the incoming transient to a low enough level such that any damage is
prevented on the device protected by ESDALC6V1W5.
ESDALC6V1W5 serves as a parallel protection elements, connected between the signal line and ground.
As the transient rises above the operating voltage of the device, the ESDALC6V1W5 becomes a low
impedance path diverting the transient current to ground.
The clamping voltage is given by the following formula:
VCL =VBR + Rd.IPP
As shown in figure A1, the ESD strikes are clamped by the transient voltage suppressor.
1. ESD protection by ESDALC6V1W5
TECHNICAL INFORMATION
Rd
RG
VG
VBR
V(i/o)
R
L O
AD
Device
to be
protected
ESD surge
ESDALC6V1W5
IPP
Fig. A1: ESD clamping behavior
To have a good approximation of the remaining voltages at both Vi/o side, we provide the typical dynamical
resistance value Rd. By taking into account the following hypothesis:
Rg > Rd and Rload > Rd
we have:
()
Vi o
V
R
V
R
BR
d
g
/
=+
×
The results of the calculation done Vg = 8kV, Rg = 330
(IEC61000-4-2 standard), VBR = 6.1V (min) and
Rd = 1.1
(typ.) give:
()
V i o
Volts
/,
= 32 8
This confirms the very low remaining voltage across the device to be protected. It is also important to note
that in this approximation the parasitic inductance effect was not taken into account. This could be a few
tenths of volts during a few ns at the Vi/o side.
相关PDF资料 |
PDF描述 |
|---|---|
| ESDASC | QUAD TRANSIL ARRAY FOR ESD PROTECTION |
| ESDC-10-4 | E-Series Coupler 902928 MHz |
| ESDC-10-4-75 | E-Series Coupler 50950 MHz |
| ESDC-10-4-75TR | E-Series Coupler 50950 MHz |
| ESDC-10-4TR | E-Series Coupler 902928 MHz |
相关代理商/技术参数 |
参数描述 |
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| ESDALC6V1W5 | 功能描述:TVS二极管阵列 25W 6.1V Quad Array RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| ESDALC6V1W5_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Quad TRANSIL array for data protection |
| ESDALC8-1BF4 | 功能描述:TVS DIODE 6VWM 16VC 0201 制造商:stmicroelectronics 系列:ESDA 包装:剪切带（CT） 零件状态:有效 类型:齐纳 单向通道:- 双向通道:1 电压 - 反向关态（典型值）:6V 电压 - 击穿（最小值）:7V 电压 - 箝位（最大值）@ Ipp:16V（标准） 电流 - 峰值脉冲（10/1000μs）:8.6A（8/20μs） 功率 - 峰值脉冲:165W 电源线路保护:无 应用:通用 不同频率时的电容:30pF @ 1MHz 工作温度:-40°C ~ 125°C （TJ） 安装类型:表面贴装 封装/外壳:0201（0603 公制） 供应商器件封装:201 标准包装:1 |
| ESDALCL5-1BM2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 Single-line low cap 13V Vbr 26pF 10nA RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ESDALCL6-2SC6 | 功能描述:TVS二极管阵列 Very low cap ESD 2 Data LN 2.5pF RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
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