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参数资料
| 型号： | EV-ADF4106SD1Z |
| 厂商： | Analog Devices Inc |
| 文件页数： | 21/24页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR ADF4106SD1Z |
| 标准包装： | 1 |
| 系列： | * |
ADF4106
Data Sheet
Rev. E | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
–0.3 V to + 3.6 V
AVDD to DVDD
–0.3 V to + 0.3 V
VP to GND
–0.3 V to + 5.8 V
VP to AVDD
–0.3 V to + 5.8 V
Digital I/O Voltage to GND
–0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
–0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND
–0.3 V to VDD + 0.3 V
RFINA to RFINB
±320 mV
Operating Temperature Range
Industrial (B Version)
–40°C to +85°C
Storage Temperature Range
–65°C to +125°C
Maximum Junction Temperature
150°C
TSSOP θJA Thermal Impedance
112°C/W
LFCSP θJA Thermal Impedance
(Paddle Soldered)
30.4°C/W
Reflow Soldering
Peak Temperature
260°C
Time at Peak Temperature
40 sec
Transistor Count
CMOS
6425
Bipolar
303
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ESD CAUTION
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