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参数资料
| 型号： | EVAL-ADF5000EB2Z |
| 厂商： | Analog Devices Inc |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR ADF5000 |
| 设计资源： | ADF500x Gerber Files |
| 标准包装： | 1 |
| 系列： | * |
Data Sheet
ADF5000
Rev. A | Page 3 of 12
SPECIFICATIONS
VDD1 = VDD2 = 3.3 V ± 10%, GND = 0 V; dBm referred to 50 Ω; TA = TMIN to TMAX, unless otherwise noted. The operating temperature
range is 40°C to +105°C.
Table 1.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
RF CHARACTERISTICS
Input Frequency
4
18
GHz
RF Input Sensitivity
10
+10
dBm
4 GHz to 18 GHz
Output Power
10
5
dBm
Single-ended output connected into 50 Ω load
7
2
dBm
Differential outputs connected into 100 Ω
differential load
Output Voltage Swing
200
330
mV p-p
Peak-to-peak voltage swing on each single-ended
output, connected into 50 Ω load
400
660
mV p-p
Peak-to-peak voltage swing on differential
output, connected into 100 Ω differential load
1000
mV p-p
Peak-to-peak voltage swing on each single-ended
output, no load condition
Phase Noise
147
dBc/Hz
Input frequency (fIN) = 12 GHz, offset = 100 kHz
Reverse Leakage
60
dBm
RF input power (PIN) = 0 dBm, RFOUT = 4 GHz
Second Harmonic Content
28
dBc
Third Harmonic Content
12
dBc
Fourth Harmonic Content
37
dBc
Fifth Harmonic Content
19
dBc
CE INPUT
Input High Voltage, VIH
2.2
V
Input Low Voltage, VIL
0.3
V
POWER SUPPLIES
Voltage Supply
3.0
3.3
3.6
V
IDD (IDD1 + IDD2)
Active
30
60
mA
CE is high
Power-Down
17
30
mA
CE is low
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