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参数资料
| 型号： | EVAL-ADG888EBZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 11/16页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR ADG888 |
| 标准包装： | 1 |
| 系列： | * |
ADG888
Rev. A | Page 4 of 16
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
+25°C
B Version1
Y Version1
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
On Resistance (RON)
0.5
Ω typ
VDD = 2.7 V, VS = 0 V to VDD
0.7
0.75
0.8
Ω max
On Resistance Match Between
Channels (RON)
0.045
Ω typ
VDD = 2.7 V, VS = 1 V
0.072
0.077
0.083
Ω max
IS = 100 mA
On Resistance Flatness (RFLAT (ON))
0.16
Ω typ
VDD = 2.7 V, VS = 0 V to VDD
0.262
Ω max
IS = 100 mA
LEAKAGE CURRENTS
VDD = 3.6 V
Source Off Leakage IS (Off )
±0.2
nA typ
Channel On Leakage ID, IS (On)
±0.2
nA typ
DIGITAL INPUTS
Input High Voltage, VINH
1.3
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
CIN, Digital Input Capacitance
2
pF typ
DYNAMIC CHARACTERISTICS2
tON
28
ns typ
RL = 50 Ω, CL = 35 pF; see Figure 19
43
47
50
ns max
VS = 1.5 V/0 V
tOFF
13
ns typ
RL = 50 Ω, CL = 35 pF; see Figure 19
20
21
22
ns max
VS = 1.5 V/0 V
Break-Before-Make Time Delay (tBBM)
14
ns typ
RL = 50 Ω, CL = 35 pF
5
ns min
Charge Injection
50
pC typ
Off Isolation
67
dB typ
Channel-to-Channel Crosstalk
99
dB typ
Adjacent channel; RL = 50 V, CL = 5 pF, f = 100 kHz;
see Figure 25
67
dB typ
Adjacent switch; RL = 50 Ω, CL = 5 pF, f = 100 kHz;
see Figure 23
Total Harmonic Distortion (THD + N)
0.01
%
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1 V p-p
Insertion Loss
0.04
dB typ
–3 dB Bandwidth
29
CS (Off )
60
pF typ
CD, CS (On)
115
pF typ
POWER REQUIREMENTS
VDD = 3.6 V
IDD
0.003
μA typ
Digital inputs = 0 V or 3.6 V
1
2
μA max
1 Temperature range for the Y version is 40°C to +125°C for the TSSOP and LFCSP; temperature range for the B version is 40°C to +85°C for the WLCSP.
2 Guaranteed by design, not production tested.
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