!"
#$%&'()%*+,#$%&'()-')
./#/01/
CMOS Image Sensor
EVS100K
Description
Block Diagram
Specification
Key Features
Asynchronous Random- access MOS Image
Sensor ARAMIS EVS100K is a user- friendly CMOS
integrated
image
sensor
using
a
patented
architecture developed by ElecVision
in order to
simplify
its
integration
into
computer- based
products.
Different
from
classic
CCD
image
sensors or some newly introduced CMOS image
sensors, ARAMIS EVS100K image sensor
can
provide a fully clock- less and X- Y addressed image
readout. This permits null or simple interface
circuit to connect the sensor to a computer or DSP.
Furthermore, it incorporates an array of 352x 290
pix els with 352x 288 effective pix els and an on-
chip amplifier and ADC as well.
Besides, a wide range continuous full
frame electronic shutter control ability (from 1us to
255m s) eliminates the need of many optical
devices such as diaphragm and mechanical shutter.
This is particularly attractive to compact and
economic products such as videophone- oriented
camera
module,
telesurveillance,
car
vision
systems, consumer products, high- tech toy and so
on.
352x 288 effective pix els
On- chip in- pix el analog fram e- buffe
Clock- less and X- Y addressed im age readout
On- chip integrated video am plifier
On- chip 8- bit A/ D converter
Fit for 1/ 3” lens
Low power dissipation ( < 200m W)
Wide range continuous full fram e electronic
shutter
Internal Black reference
LCC- 48 package
Pixel Pitch:
12.1umx 12.1um CMOS active
square pix el
Pixel Number:
352x 290 pix els with 352x 288
effective pix els
Optical Size:
5.5mm in diagonal
Sensitivity:
9V/ lux .s
Spectrum Span
400~1100 nm
Dark Current
25mV/ s @ 25
oC
Readout speed:
10Mpix els/ s
ADC:
On- chip 8- bit A/ D converter
Power supply:
3.3v or 5.0v
Electronic shutter:
Full frame shutter
Color filter:
Bayer’s
Package:
LCC- 48 package