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参数资料
| 型号： | EZ0150V1 |
| 厂商： | SANKEN ELECTRIC CO LTD |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 150 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 19K |
| 代理商： | EZ0150V1 |
RZ1030
Avalanche Diodes with built-in Thyristor
Parameter
Type No.
Absolute Maximum Ratings
VRDC
(V)
(–10C)
ITSM
(A)
VZ
(V)
VR =VRM
max
VR =VRM
Ta =100
°C max
IR
(
A)
IR (H)
(
A)
(typ.)
(g)
Tj
(
°C)
Tstg
(
°C)
Electrical Characteristics (Ta =25
°C)
Others
Mass
RZ1030
20
28
40
50
80
105
125
150
180
125
30
27 to 33
0.03
0.05
0.07
0.18
0.22
0.30
0.18
0.2
0.44
34 to 40
50 to 60
60 to 70
90 to 110
115 to 135
140 to 160
165 to 185
185 to 215
140 to 160
10
50
–10 to +125
–40 to +150
RZ1040
RZ1055
RZ1065 *
RZ1100 *
RZ1125 *
RZ1150
RZ1175
RZ1200
EZ0150
A
B
VZ Temperature dependence
RZ1055
RZ1040
RZ1065
50
40
45
35
36
30
31.9
25
25.9
20
22
–10 0
25
50
75
100
125
Reverse
breakdown
voltage
V
Z
(V)
max
min
VRDC Temperature characteristic
VR(DC) Temperature characteristic
VZ Temperature dependence
VR(DC) Temperature characteristic
22
20
21
19
18
Ambient Temperature Ta (
°C)
Ambient Temperature Ta (
°C)
Ambient Temperature Ta (
°C)
Ambient Temperature Ta (
°C)
Ambient Temperature Ta (
°C)
Ambient Temperature Ta (
°C)
–10 0
25
50
75
100
125
DC
reverse
blocking
voltage
V
R
(DC)
(V)
VZ Temperature dependence
Reverse
breakdown
voltage
V
Z
(V)
VR(DC) Temperature characteristic
DC
reverse
blocking
voltage
V
R(DC)
(V)
Reverse
breakdown
voltage
V
Z
(V)
DC
reverse
blocking
voltage
V
R
(DC)
(V)
70
60
65
55
67
57
50
57.6
45
47.6
40
–10 0
25
50
75
100
125
max
min
45
40
35
–10 0
25
50
75
100
125
55
45
50
40
35
38
30
25
28
–10 0
25
50
75
100
125
max
min
30
28
29
27
26
–10 0
25
50
75
100
125
RZ1100
RZ1125
62.5
±0.7
7.2
±0.2
4.0
±0.2
0.78
±0.05
Cathode Mark
62.3
±0.7
5.0
±0.2
2.7
±0.2
0.6 ±
0.05
Cathode Mark
* Under development
110
50Hz
Half-cycle Sinewave
Single Shot
Fig.
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
A
Fig.
B
Fig.
VRDC Temperature characteristic
Equivalent circuit diagram
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