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参数资料
| 型号： | F10130PC |
| 元件分类： | 开关 |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数： | 1/7页 |
| 文件大小： | 525K |
| 代理商： | F10130PC |
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
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Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
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Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
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Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
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Double shell case
For high mechanical strength and high electrical insulation.
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Compact size
The small rear end of the switch allows space saving behind the panel.
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Finish
Matt black finish on body, bushing, lever and hardware.
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Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
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Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
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相关代理商/技术参数 |
参数描述 |
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| F1014 | 制造商:POLYFET 制造商全称:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1015 | 制造商:POLYFET 制造商全称:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1016 | 制造商:POLYFET 制造商全称:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1018 | 制造商:POLYFET 制造商全称:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F10183-000 | 制造商:TE Connectivity 功能描述:ZH2-28.0-0-FSP-SM - Cable Rools/Shrink Tubing |
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